Inventor
KRIVEC STEFAN
AT18 patents
⚠️ This page may combine multiple inventors who share the name “KRIVEC STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
13 patentsUS9595469B2Mar 14, 2017
Semiconductor device and method for producing the same
INFINEON TECHNOLOGIES AG2 citations72
US9929111B2Mar 27, 2018
Method of manufacturing a layer structure having partially sealed pores
INFINEON TECHNOLOGIES AG4 citations71
US9620466B1Apr 11, 2017
Method of manufacturing an electronic device having a contact pad with partially sealed pores
INFINEON TECHNOLOGIES AG4 citations71
US12327727B2Jun 10, 2025
Chip with a silicon carbide substrate
INFINEON TECHNOLOGIES AG0 citations59
US11842938B2Dec 12, 2023
Semiconductor device and method for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations59
US11798807B2Oct 24, 2023
Process for producing an electrical contact on a silicon carbide substrate
INFINEON TECHNOLOGIES AG0 citations59
US11217500B2Jan 4, 2022
Semiconductor device and method for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations59
US11043383B2Jun 22, 2021
Electrical contact connection on silicon carbide substrate
INFINEON TECHNOLOGIES AG0 citations59
US11195713B2Dec 7, 2021
Methods of forming a silicon-insulator layer and semiconductor device having the same
INFINEON TECHNOLOGIES AG0 citations57
US9997459B2Jun 12, 2018
Semiconductor device having a barrier layer made of amorphous molybdenum nitride and method for producing such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10361096B2Jul 23, 2019
Semiconductor component, method for processing a substrate and method for producing a semiconductor component
INFINEON TECHNOLOGIES AG0 citations50
US10393697B2Aug 27, 2019
Apparatus for analyzing ion kinetics in dielectrics
INFINEON TECHNOLOGIES AG0 citations49
US9685347B2Jun 20, 2017
Semiconductor device and method for producing the same
INFINEON TECHNOLOGIES AG0 citations40
INFINEON TECHNOLOGIES AUSTRIA AG
4 patentsUS9660037B1May 23, 2017
Semiconductor wafer and method
INFINEON TECHNOLOGIES AUSTRIA AG39 citations88
US10763339B2Sep 1, 2020
Method for manufacturing a semiconductor device having a Schottky contact
INFINEON TECHNOLOGIES AUSTRIA AG0 citations49
US10431698B2Oct 1, 2019
Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride
INFINEON TECHNOLOGIES AUSTRIA AG0 citations49
US10199514B2Feb 5, 2019
Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer
INFINEON TECHNOLOGIES AUSTRIA AG0 citations49