Inventor
MASUOKA YURI
KR19 patents
⚠️ This page may combine multiple inventors who share the name “MASUOKA YURI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS10707234B2Jul 7, 2020
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11728429B2Aug 15, 2023
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations66
US10916476B2Feb 9, 2021
Semiconductor devices with various line widths and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US11222978B2Jan 11, 2022
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US9673106B2Jun 6, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US11469228B2Oct 11, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations50
US10770355B2Sep 8, 2020
Semiconductor devices with various line widths and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations49
TAIWAN SEMICONDUCTOR MFG
4 patentsUS8357581B2Jan 22, 2013
Transistor performance improving method with metal gate
TAIWAN SEMICONDUCTOR MFG5 citations83
US8030718B2Oct 4, 2011
Local charge and work function engineering on MOSFET
TAIWAN SEMICONDUCTOR MFG8 citations83
US8754487B2Jun 17, 2014
Semiconductor device with metal gate
TAIWAN SEMICONDUCTOR MFG1 citations62
US8012817B2Sep 6, 2011
Transistor performance improving method with metal gate
TAIWAN SEMICONDUCTOR MFG4 citations62
NEC ELECTRONICS CORP
4 patentsUS7030464B2Apr 18, 2006
Semiconductor device and method of manufacturing the same
NEC ELECTRONICS CORP9 citations73
US7759744B2Jul 20, 2010
Semiconductor device having high dielectric constant layers of different thicknesses
NEC ELECTRONICS CORP4 citations62
US7754570B2Jul 13, 2010
Semiconductor device
NEC ELECTRONICS CORP2 citations62
US7102183B2Sep 5, 2006
MOS transistor
NEC ELECTRONICS CORP0 citations41