Inventor
KAL SUBHADEEP
US31 patents
Patents
31 patentsUS10833078B2Nov 10, 2020
Semiconductor apparatus having stacked gates and method of manufacture thereof
TOKYO ELECTRON LTD34 citations94
US10685887B2Jun 16, 2020
Method for incorporating multiple channel materials in a complimentary field effective transistor (CFET) device
TOKYO ELECTRON LTD26 citations94
US9997598B2Jun 12, 2018
Three-dimensional semiconductor device and method of fabrication
TOKYO ELECTRON LTD26 citations94
US10714391B2Jul 14, 2020
Method for controlling transistor delay of nanowire or nanosheet transistor devices
TOKYO ELECTRON LTD11 citations86
US10991626B2Apr 27, 2021
Method for controlling transistor delay of nanowire or nanosheet transistor devices
TOKYO ELECTRON LTD6 citations84
US10378105B2Aug 13, 2019
Selective deposition with surface treatment
TOKYO ELECTRON LTD12 citations83
US11631671B2Apr 18, 2023
3D complementary metal oxide semiconductor (CMOS) device and method of forming the same
TOKYO ELECTRON LTD5 citations75
US11264274B2Mar 1, 2022
Reverse contact and silicide process for three-dimensional logic devices
TOKYO ELECTRON LTD5 citations73
US10923356B2Feb 16, 2021
Gas phase etch with controllable etch selectivity of silicon-germanium alloys
TOKYO ELECTRON LTD2 citations73
US9984890B2May 29, 2018
Isotropic silicon and silicon-germanium etching with tunable selectivity
TOKYO ELECTRON LTD6 citations73
US9748110B2Aug 29, 2017
Method and system for selective spacer etch for multi-patterning schemes
TOKYO ELECTRON LTD4 citations72
US10971372B2Apr 6, 2021
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD2 citations71
US10573564B2Feb 25, 2020
Method for fabricating NFET and PFET nanowire devices
TOKYO ELECTRON LTD5 citations69
US12336274B2Jun 17, 2025
Self-aligned method for vertical recess for 3D device integration
TOKYO ELECTRON LTD1 citations64
US11444082B2Sep 13, 2022
Semiconductor apparatus having stacked gates and method of manufacture thereof
TOKYO ELECTRON LTD1 citations62
US11424123B2Aug 23, 2022
Forming a semiconductor feature using atomic layer etch
TOKYO ELECTRON LTD1 citations62
US11322350B2May 3, 2022
Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics
TOKYO ELECTRON LTD0 citations62
US11538691B2Dec 27, 2022
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD0 citations61
US11380554B2Jul 5, 2022
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations61
US11715643B2Aug 1, 2023
Gas phase etch with controllable etch selectivity of metals
TOKYO ELECTRON LTD0 citations60
US11322401B2May 3, 2022
Reverse contact and silicide process for three-dimensional semiconductor devices
TOKYO ELECTRON LTD1 citations60
US12593634B2Mar 31, 2026
Selective gas phase etch of silicon germanium alloys
TOKYO ELECTRON LTD0 citations58
US12261053B2Mar 25, 2025
Substrate processing with selective etching
TOKYO ELECTRON LTD0 citations57
US12444614B2Oct 14, 2025
Etch selectivity modulation by fluorocarbon treatment
TOKYO ELECTRON LTD0 citations54
US12568651B2Mar 3, 2026
Semiconductor structure having stacked gates and method of manufacture thereof
TOKYO ELECTRON LTD0 citations52
US12568677B2Mar 3, 2026
Method of self-aligned dielectric wall formation for forksheet application
TOKYO ELECTRON LTD0 citations51
US11557479B2Jan 17, 2023
Methods for EUV inverse patterning in processing of microelectronic workpieces
TOKYO ELECTRON LTD0 citations51
US10580660B2Mar 3, 2020
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations51
US12512327B2Dec 30, 2025
Surface modification to achieve selective isotropic etch
TOKYO ELECTRON LTD0 citations47
US12272558B2Apr 8, 2025
Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
TOKYO ELECTRON LTD0 citations47
US12261054B2Mar 25, 2025
Substrate processing with material modification and removal
TOKYO ELECTRON LTD0 citations47