P

Inventor

DEVILLIERS ANTON

US75 patents
⚠️ This page may combine multiple inventors who share the name “DEVILLIERS ANTON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

32 patents
US10770479B2Sep 8, 2020

Three-dimensional device and method of forming the same

TOKYO ELECTRON LTD20 citations94
US10734224B2Aug 4, 2020

Method and device for incorporating single diffusion break into nanochannel structures of FET devices

TOKYO ELECTRON LTD20 citations94
US10453850B2Oct 22, 2019

Three-dimensional semiconductor device including integrated circuit, transistors and transistor components and method of fabrication

TOKYO ELECTRON LTD23 citations94
US10388519B2Aug 20, 2019

Method and device for incorporating single diffusion break into nanochannel structures of FET devices

TOKYO ELECTRON LTD23 citations94
US9997598B2Jun 12, 2018

Three-dimensional semiconductor device and method of fabrication

TOKYO ELECTRON LTD26 citations94
US10714391B2Jul 14, 2020

Method for controlling transistor delay of nanowire or nanosheet transistor devices

TOKYO ELECTRON LTD11 citations86
US10991626B2Apr 27, 2021

Method for controlling transistor delay of nanowire or nanosheet transistor devices

TOKYO ELECTRON LTD6 citations84
US10622233B2Apr 14, 2020

Amelioration of global wafer distortion based on determination of localized distortions of a semiconductor wafer

TOKYO ELECTRON LTD14 citations83
US9718082B2Aug 1, 2017

Inline dispense capacitor

TOKYO ELECTRON LTD12 citations82
US11848236B2Dec 19, 2023

Method for recessing a fill material within openings formed on a patterned substrate

TOKYO ELECTRON LTD2 citations73
US11735525B2Aug 22, 2023

Power delivery network for CFET with buried power rails

TOKYO ELECTRON LTD2 citations73
US11574845B2Feb 7, 2023

Apparatus and method for simultaneous formation of diffusion break, gate cut, and independent N and P gates for 3D transistor devices

TOKYO ELECTRON LTD2 citations73
US11488947B2Nov 1, 2022

Highly regular logic design for efficient 3D integration

TOKYO ELECTRON LTD2 citations73
US11443953B2Sep 13, 2022

Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning

TOKYO ELECTRON LTD2 citations73
US11342427B2May 24, 2022

3D directed self-assembly for nanostructures

TOKYO ELECTRON LTD2 citations73
US9263297B2Feb 16, 2016

Method for self-aligned double patterning without atomic layer deposition

TOKYO ELECTRON LTD5 citations73
US9281251B2Mar 8, 2016

Substrate backside texturing

TOKYO ELECTRON LTD3 citations72
US12336274B2Jun 17, 2025

Self-aligned method for vertical recess for 3D device integration

TOKYO ELECTRON LTD1 citations64
US12557392B2Feb 17, 2026

Highly regular logic design for efficient 3D integration

TOKYO ELECTRON LTD0 citations63
US12014984B2Jun 18, 2024

Method of manufacturing a semiconductor apparatus having stacked devices

TOKYO ELECTRON LTD0 citations63
US11721582B2Aug 8, 2023

Method of making 3D circuits with integrated stacked 3D metal lines for high density circuits

TOKYO ELECTRON LTD0 citations63
US11495540B2Nov 8, 2022

Semiconductor apparatus having stacked devices and method of manufacture thereof

TOKYO ELECTRON LTD0 citations63
US11251080B2Feb 15, 2022

Method of making 3D circuits with integrated stacked 3D metal lines for high density circuits

TOKYO ELECTRON LTD0 citations63
US10916637B2Feb 9, 2021

Method of forming gate spacer for nanowire FET device

TOKYO ELECTRON LTD1 citations63
US11764113B2Sep 19, 2023

Method of 3D logic fabrication to sequentially decrease processing temperature and maintain material thermal thresholds

TOKYO ELECTRON LTD1 citations62
US11393694B2Jul 19, 2022

Method for planarization of organic films

TOKYO ELECTRON LTD0 citations62
US11360388B2Jun 14, 2022

Critical dimension correction via calibrated trim dosing

TOKYO ELECTRON LTD1 citations62
US12099299B2Sep 24, 2024

Method of patterning a substrate using a sidewall spacer etch mask

TOKYO ELECTRON LTD0 citations61
US11782346B2Oct 10, 2023

Method of patterning a substrate using a sidewall spacer etch mask

TOKYO ELECTRON LTD0 citations61
US12512356B2Dec 30, 2025

Apparatus and method for wafer alignment

TOKYO ELECTRON LTD0 citations60
US11322401B2May 3, 2022

Reverse contact and silicide process for three-dimensional semiconductor devices

TOKYO ELECTRON LTD1 citations60
US12354991B2Jul 8, 2025

Replacement buried power rail in backside power delivery

TOKYO ELECTRON LTD0 citations52

DEVILLIERS ANTON

6 patents

MICRON TECHNOLOGY INC

5 patents

SILLS SCOTT

4 patents

ZHANG ZISHU

1 patent

ZHOU JIANMING

1 patent

LIGHT SCOTT

1 patent

Showing the top 50 of 75 patents by PatentIndex Score.