Inventor
DEVILLIERS ANTON
US75 patents
⚠️ This page may combine multiple inventors who share the name “DEVILLIERS ANTON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
32 patentsUS10770479B2Sep 8, 2020
Three-dimensional device and method of forming the same
TOKYO ELECTRON LTD20 citations94
US10734224B2Aug 4, 2020
Method and device for incorporating single diffusion break into nanochannel structures of FET devices
TOKYO ELECTRON LTD20 citations94
US10453850B2Oct 22, 2019
Three-dimensional semiconductor device including integrated circuit, transistors and transistor components and method of fabrication
TOKYO ELECTRON LTD23 citations94
US10388519B2Aug 20, 2019
Method and device for incorporating single diffusion break into nanochannel structures of FET devices
TOKYO ELECTRON LTD23 citations94
US9997598B2Jun 12, 2018
Three-dimensional semiconductor device and method of fabrication
TOKYO ELECTRON LTD26 citations94
US10714391B2Jul 14, 2020
Method for controlling transistor delay of nanowire or nanosheet transistor devices
TOKYO ELECTRON LTD11 citations86
US10991626B2Apr 27, 2021
Method for controlling transistor delay of nanowire or nanosheet transistor devices
TOKYO ELECTRON LTD6 citations84
US10622233B2Apr 14, 2020
Amelioration of global wafer distortion based on determination of localized distortions of a semiconductor wafer
TOKYO ELECTRON LTD14 citations83
US9718082B2Aug 1, 2017
Inline dispense capacitor
TOKYO ELECTRON LTD12 citations82
US11848236B2Dec 19, 2023
Method for recessing a fill material within openings formed on a patterned substrate
TOKYO ELECTRON LTD2 citations73
US11735525B2Aug 22, 2023
Power delivery network for CFET with buried power rails
TOKYO ELECTRON LTD2 citations73
US11574845B2Feb 7, 2023
Apparatus and method for simultaneous formation of diffusion break, gate cut, and independent N and P gates for 3D transistor devices
TOKYO ELECTRON LTD2 citations73
US11488947B2Nov 1, 2022
Highly regular logic design for efficient 3D integration
TOKYO ELECTRON LTD2 citations73
US11443953B2Sep 13, 2022
Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning
TOKYO ELECTRON LTD2 citations73
US11342427B2May 24, 2022
3D directed self-assembly for nanostructures
TOKYO ELECTRON LTD2 citations73
US9263297B2Feb 16, 2016
Method for self-aligned double patterning without atomic layer deposition
TOKYO ELECTRON LTD5 citations73
US9281251B2Mar 8, 2016
Substrate backside texturing
TOKYO ELECTRON LTD3 citations72
US12336274B2Jun 17, 2025
Self-aligned method for vertical recess for 3D device integration
TOKYO ELECTRON LTD1 citations64
US12557392B2Feb 17, 2026
Highly regular logic design for efficient 3D integration
TOKYO ELECTRON LTD0 citations63
US12014984B2Jun 18, 2024
Method of manufacturing a semiconductor apparatus having stacked devices
TOKYO ELECTRON LTD0 citations63
US11721582B2Aug 8, 2023
Method of making 3D circuits with integrated stacked 3D metal lines for high density circuits
TOKYO ELECTRON LTD0 citations63
US11495540B2Nov 8, 2022
Semiconductor apparatus having stacked devices and method of manufacture thereof
TOKYO ELECTRON LTD0 citations63
US11251080B2Feb 15, 2022
Method of making 3D circuits with integrated stacked 3D metal lines for high density circuits
TOKYO ELECTRON LTD0 citations63
US10916637B2Feb 9, 2021
Method of forming gate spacer for nanowire FET device
TOKYO ELECTRON LTD1 citations63
US11764113B2Sep 19, 2023
Method of 3D logic fabrication to sequentially decrease processing temperature and maintain material thermal thresholds
TOKYO ELECTRON LTD1 citations62
US11393694B2Jul 19, 2022
Method for planarization of organic films
TOKYO ELECTRON LTD0 citations62
US11360388B2Jun 14, 2022
Critical dimension correction via calibrated trim dosing
TOKYO ELECTRON LTD1 citations62
US12099299B2Sep 24, 2024
Method of patterning a substrate using a sidewall spacer etch mask
TOKYO ELECTRON LTD0 citations61
US11782346B2Oct 10, 2023
Method of patterning a substrate using a sidewall spacer etch mask
TOKYO ELECTRON LTD0 citations61
US12512356B2Dec 30, 2025
Apparatus and method for wafer alignment
TOKYO ELECTRON LTD0 citations60
US11322401B2May 3, 2022
Reverse contact and silicide process for three-dimensional semiconductor devices
TOKYO ELECTRON LTD1 citations60
US12354991B2Jul 8, 2025
Replacement buried power rail in backside power delivery
TOKYO ELECTRON LTD0 citations52
DEVILLIERS ANTON
6 patentsUS8492282B2Jul 23, 2013
Methods of forming a masking pattern for integrated circuits
DEVILLIERS ANTON19 citations92
US8450776B2May 28, 2013
Epitaxial devices
DEVILLIERS ANTON7 citations83
US10151981B2Dec 11, 2018
Methods of forming structures supported by semiconductor substrates
DEVILLIERS ANTON3 citations73
US8815747B2Aug 26, 2014
Methods of forming patterns on substrates
DEVILLIERS ANTON4 citations73
US8216943B2Jul 10, 2012
Epitaxial growth method
DEVILLIERS ANTON4 citations73
US8153522B2Apr 10, 2012
Patterning mask and method of formation of mask using step double patterning
DEVILLIERS ANTON2 citations62
MICRON TECHNOLOGY INC
5 patentsUS8871646B2Oct 28, 2014
Methods of forming a masking pattern for integrated circuits
MICRON TECHNOLOGY INC19 citations93
US8748321B2Jun 10, 2014
Method for epitaxial devices
MICRON TECHNOLOGY INC5 citations84
US9385276B2Jul 5, 2016
Epitaxial devices
MICRON TECHNOLOGY INC1 citations63
US9153458B2Oct 6, 2015
Methods of forming a pattern on a substrate
MICRON TECHNOLOGY INC2 citations63
US9112104B2Aug 18, 2015
Epitaxial devices
MICRON TECHNOLOGY INC2 citations63
SILLS SCOTT
4 patentsUS8796155B2Aug 5, 2014
Methods of fabricating substrates
SILLS SCOTT20 citations92
US8273634B2Sep 25, 2012
Methods of fabricating substrates
SILLS SCOTT21 citations92
US8247302B2Aug 21, 2012
Methods of fabricating substrates
SILLS SCOTT19 citations92
US8603884B2Dec 10, 2013
Methods of fabricating substrates
SILLS SCOTT7 citations84
ZHANG ZISHU
1 patentZHOU JIANMING
1 patentLIGHT SCOTT
1 patentShowing the top 50 of 75 patents by PatentIndex Score.