P

Inventor

YOO CHANG SIK

KR65 patents
⚠️ This page may combine multiple inventors who share the name “YOO CHANG SIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US6877079B2Apr 5, 2005

Memory system having point-to-point bus configuration

SAMSUNG ELECTRONICS CO LTD91 citations98
US6834014B2Dec 21, 2004

Semiconductor memory systems, methods, and devices for controlling active termination

SAMSUNG ELECTRONICS CO LTD89 citations98
US6768363B2Jul 27, 2004

Output driver circuit for controlling up-slew rate and down-slew rate independently and up-driving strength and down-driving strength independently

SAMSUNG ELECTRONICS CO LTD56 citations96
US6477110B2Nov 5, 2002

Semiconductor memory device having different data rates in read operation and write operation

SAMSUNG ELECTRONICS CO LTD46 citations96
US6304116B1Oct 16, 2001

Delay locked looped circuits and methods of operation thereof

SAMSUNG ELECTRONICS CO LTD95 citations96
US7426145B2Sep 16, 2008

Synchronous semiconductor memory device having on-die termination circuit and on-die termination method

SAMSUNG ELECTRONICS CO LTD19 citations93
US7313715B2Dec 25, 2007

Memory system having stub bus configuration

SAMSUNG ELECTRONICS CO LTD31 citations93
US7239560B2Jul 3, 2007

Synchronous semiconductor memory device having on-die termination circuit and on-die termination method

SAMSUNG ELECTRONICS CO LTD25 citations93
US6683478B2Jan 27, 2004

Apparatus for ensuring correct start-up and phase locking of delay locked loop

SAMSUNG ELECTRONICS CO LTD31 citations93
US6625242B1Sep 23, 2003

Delay locked loops and methods that shift the phase of a delayed clock signal based on a reference phase value

SAMSUNG ELECTRONICS CO LTD36 citations93
US6603686B2Aug 5, 2003

Semiconductor memory device having different data rates in read operation and write operation

SAMSUNG ELECTRONICS CO LTD38 citations93
US7457189B2Nov 25, 2008

Integrated circuit memory devices that support selective mode register set commands and related methods

SAMSUNG ELECTRONICS CO LTD26 citations92
US7277356B2Oct 2, 2007

Methods of controlling memory modules that support selective mode register set commands

SAMSUNG ELECTRONICS CO LTD21 citations92
US7102958B2Sep 5, 2006

Integrated circuit memory devices that support selective mode register set commands and related memory modules, memory controllers, and methods

SAMSUNG ELECTRONICS CO LTD27 citations92
US6940321B2Sep 6, 2005

Circuit for generating a data strobe signal used in a double data rate synchronous semiconductor device

SAMSUNG ELECTRONICS CO LTD28 citations92
US6535040B2Mar 18, 2003

Duty cycle correction circuits that reduce distortion caused by mismatched transistor pairs

SAMSUNG ELECTRONICS CO LTD26 citations91
US9437362B2Sep 6, 2016

Apparatus and method for wireless power reception

SAMSUNG ELECTRONICS CO LTD10 citations84
US7804720B2Sep 28, 2010

Integrated circuit memory devices including mode registers set using a data input/output bus

SAMSUNG ELECTRONICS CO LTD10 citations84
US7636273B2Dec 22, 2009

Integrated circuit memory devices that support selective mode register set commands

SAMSUNG ELECTRONICS CO LTD9 citations84
US7376021B2May 20, 2008

Data output circuit and method in DDR synchronous semiconductor device

SAMSUNG ELECTRONICS CO LTD15 citations84
US7369445B2May 6, 2008

Methods of operating memory systems including memory devices set to different operating modes and related systems

SAMSUNG ELECTRONICS CO LTD15 citations84
US6670835B2Dec 30, 2003

Delay locked loop for controlling phase increase or decrease and phase control method thereof

SAMSUNG ELECTRONICS CO LTD15 citations84
US6744284B2Jun 1, 2004

Receiver circuit of semiconductor integrated circuit

SAMSUNG ELECTRONICS CO LTD11 citations74
US6549444B2Apr 15, 2003

Memory device with prefetched data ordering distributed in prefetched data path logic, circuit, and method of ordering prefetched data

SAMSUNG ELECTRONICS CO LTD7 citations74
US9793740B2Oct 17, 2017

Apparatus and method for charge control in wireless charging system

SAMSUNG ELECTRONICS CO LTD3 citations73
US6483364B2Nov 19, 2002

Ladder type clock network for reducing skew of clock signals

SAMSUNG ELECTRONICS CO LTD11 citations73
US7894260B2Feb 22, 2011

Synchronous semiconductor memory device having on-die termination circuit and on-die termination method

SAMSUNG ELECTRONICS CO LTD3 citations63
US7616937B2Nov 10, 2009

Subharmonic mixer capable of reducing noise and enhancing gain and linearlty

SAMSUNG ELECTRONICS CO LTD3 citations63
US7375596B2May 20, 2008

Quadrature voltage controlled oscillator

SAMSUNG ELECTRONICS CO LTD6 citations63
US6448814B1Sep 10, 2002

CMOS buffer circuit

SAMSUNG ELECTRONICS CO LTD2 citations63
US6456122B1Sep 24, 2002

Input buffer circuit for transforming pseudo differential signals into full differential signals

SAMSUNG ELECTRONICS CO LTD6 citations62
US10205353B2Feb 12, 2019

Apparatus and method for charging control in wireless charging system

SAMSUNG ELECTRONICS CO LTD0 citations52

UNIV HANYANG IND UNIV COOP FOUND

6 patents

HYNIX SEMICONDUCTOR INC

2 patents

IUCF HYU

2 patents

JEONG CHUN SEOK

2 patents

SILICON MOTION INC

1 patent

SAMSUNG ELECTRO MECH

1 patent

PARK JAE-WOO

1 patent

YOO CHANG-SIK

1 patent

YANG JEONG MO

1 patent

ARABILITY IP LLC

1 patent

Showing the top 50 of 65 patents by PatentIndex Score.