Inventor
NA HYUNG JOO
KR10 patents
Patents
10 patentsUS10910376B2Feb 2, 2021
Semiconductor devices including diffusion break regions
SAMSUNG ELECTRONICS CO LTD4 citations71
US10804265B2Oct 13, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11784186B2Oct 10, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11380687B2Jul 5, 2022
Semiconductor devices including diffusion break regions
SAMSUNG ELECTRONICS CO LTD2 citations70
US11101269B2Aug 24, 2021
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations70
US12183734B2Dec 31, 2024
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11538807B2Dec 27, 2022
Method for fabricating a semiconductor device including a gate structure with an inclined side wall
SAMSUNG ELECTRONICS CO LTD0 citations60
US11011519B2May 18, 2021
Semiconductor device including gate structure having device isolation film
SAMSUNG ELECTRONICS CO LTD0 citations60
US11063150B2Jul 13, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US10636793B2Apr 28, 2020
FINFETs having electrically insulating diffusion break regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD0 citations39