Inventor
Jia Jianquan
CN33 patents
Patents
33 patentsUS11024371B2Jun 1, 2021
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD15 citations94
US11501822B2Nov 15, 2022
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD5 citations84
US11081164B2Aug 3, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD5 citations84
US10957408B1Mar 23, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD6 citations84
US10991438B1Apr 27, 2021
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD7 citations82
US11862230B2Jan 2, 2024
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD2 citations73
US11222674B2Jan 11, 2022
Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing same
YANGTZE MEMORY TECH CO LTD5 citations73
US11710529B2Jul 25, 2023
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD2 citations72
US10885990B1Jan 5, 2021
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US10957409B1Mar 23, 2021
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD3 citations71
US12512145B2Dec 30, 2025
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD0 citations62
US12412609B2Sep 9, 2025
Method of reducing program disturbance in memory device and memory device utilizing same
YANGTZE MEMORY TECH CO LTD0 citations62
US12176043B2Dec 24, 2024
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US12159665B2Dec 3, 2024
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12100456B2Sep 24, 2024
Memory device and erasing and verification method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11705190B2Jul 18, 2023
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11676646B2Jun 13, 2023
Method of reducing program disturbance in memory device and memory device utilizing same
YANGTZE MEMORY TECH CO LTD0 citations62
US11676665B2Jun 13, 2023
Memory device and erasing and verification method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11423995B2Aug 23, 2022
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US11205494B2Dec 21, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD0 citations62
US11158380B1Oct 26, 2021
Memory device and erasing and verification method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12499949B2Dec 16, 2025
Memory devices and operating methods thereof, memory systems
YANGTZE MEMORY TECH CO LTD0 citations61
US11848058B2Dec 19, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US11626170B2Apr 11, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US11398284B2Jul 26, 2022
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD0 citations61
US12136453B2Nov 5, 2024
Systems, methods and media of optimization of temporary read errors in 3D NAND memory devices
YANGTZE MEMORY TECH CO LTD0 citations60
US12537067B2Jan 27, 2026
Method of operating memory, memory, and memory system
YANGTZE MEMORY TECH CO LTD0 citations59
US12254930B2Mar 18, 2025
Control method for memory erase operations, apparatus, and storage medium thereof
YANGTZE MEMORY TECH CO LTD0 citations57
US12354668B2Jul 8, 2025
Programming method for semiconductor device and semiconductor device
YANGTZE MEMORY TECH CO LTD0 citations51
US12165716B2Dec 10, 2024
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD0 citations50
US12216907B2Feb 4, 2025
Method of improving programming operations in 3D NAND systems
YANGTZE MEMORY TECH CO LTD0 citations49
US11864379B2Jan 2, 2024
Three-dimensional memory and control method thereof
YANGTZE MEMORY TECH CO LTD0 citations49
US11417397B2Aug 16, 2022
Non-volatile memory device and control method for mitigating memory cell overwritten
YANGTZE MEMORY TECH CO LTD0 citations49