Inventor
YOU KAIKAI
CN26 patents
Patents
26 patentsUS11024371B2Jun 1, 2021
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD15 citations94
US11501822B2Nov 15, 2022
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD5 citations84
US11081164B2Aug 3, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD5 citations84
US10957408B1Mar 23, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD6 citations84
US10998049B1May 4, 2021
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10991438B1Apr 27, 2021
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD7 citations82
US11862230B2Jan 2, 2024
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD2 citations73
US11222674B2Jan 11, 2022
Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing same
YANGTZE MEMORY TECH CO LTD5 citations73
US11710529B2Jul 25, 2023
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD2 citations72
US10885990B1Jan 5, 2021
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US12512145B2Dec 30, 2025
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD0 citations62
US12412609B2Sep 9, 2025
Method of reducing program disturbance in memory device and memory device utilizing same
YANGTZE MEMORY TECH CO LTD0 citations62
US12176043B2Dec 24, 2024
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US12159665B2Dec 3, 2024
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11705190B2Jul 18, 2023
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11676646B2Jun 13, 2023
Method of reducing program disturbance in memory device and memory device utilizing same
YANGTZE MEMORY TECH CO LTD0 citations62
US11423995B2Aug 23, 2022
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US11257545B2Feb 22, 2022
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11205494B2Dec 21, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD0 citations62
US11848058B2Dec 19, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US11626170B2Apr 11, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US12136453B2Nov 5, 2024
Systems, methods and media of optimization of temporary read errors in 3D NAND memory devices
YANGTZE MEMORY TECH CO LTD0 citations60
US12537067B2Jan 27, 2026
Method of operating memory, memory, and memory system
YANGTZE MEMORY TECH CO LTD0 citations59
US11670373B2Jun 6, 2023
Three-dimensional memory device programming with reduced threshold voltage shift
YANGTZE MEMORY TECH CO LTD0 citations51
US12505890B2Dec 23, 2025
Memories and operation methods thereof, memory systems and electronic devices
YANGTZE MEMORY TECH CO LTD0 citations47
US11127464B2Sep 21, 2021
Method of programming 3D memory device and related 3D memory device
YANGTZE MEMORY TECH CO LTD0 citations41