P

Inventor

LOPATIN SERGEY

US77 patents
⚠️ This page may combine multiple inventors who share the name “LOPATIN SERGEY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

38 patents
US6515368B1Feb 4, 2003

Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper

ADVANCED MICRO DEVICES INC130 citations99
US6420189B1Jul 16, 2002

Superconducting damascene interconnected for integrated circuit

ADVANCED MICRO DEVICES INC166 citations99
US6291348B1Sep 18, 2001

Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed

ADVANCED MICRO DEVICES INC256 citations99
US6245670B1Jun 12, 2001

Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure

ADVANCED MICRO DEVICES INC287 citations99
US6242349B1Jun 5, 2001

Method of forming copper/copper alloy interconnection with reduced electromigration

ADVANCED MICRO DEVICES INC439 citations99
US6482656B1Nov 19, 2002

Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit

ADVANCED MICRO DEVICES INC88 citations98
US6528409B1Mar 4, 2003

Interconnect structure formed in porous dielectric material with minimized degradation and electromigration

ADVANCED MICRO DEVICES INC624 citations97
US6447933B1Sep 10, 2002

Formation of alloy material using alternating depositions of alloy doping element and bulk material

ADVANCED MICRO DEVICES INC115 citations97
US6630741B1Oct 7, 2003

Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed

ADVANCED MICRO DEVICES INC58 citations96
US6387818B1May 14, 2002

Method of porous dielectric formation with anodic template

ADVANCED MICRO DEVICES INC54 citations96
US6350687B1Feb 26, 2002

Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film

ADVANCED MICRO DEVICES INC75 citations96
US6291082B1Sep 18, 2001

Method of electroless ag layer formation for cu interconnects

ADVANCED MICRO DEVICES INC59 citations96
US6103624AAug 15, 2000

Method of improving Cu damascene interconnect reliability by laser anneal before barrier polish

ADVANCED MICRO DEVICES INC65 citations96
US6228759B1May 8, 2001

Method of forming an alloy precipitate to surround interconnect to minimize electromigration

ADVANCED MICRO DEVICES INC69 citations94
US6689689B1Feb 10, 2004

Selective deposition process for allowing damascene-type Cu interconnect lines

ADVANCED MICRO DEVICES INC26 citations93
US6559546B1May 6, 2003

Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure

ADVANCED MICRO DEVICES INC16 citations93
US6500743B1Dec 31, 2002

Method of copper-polysilicon T-gate formation

ADVANCED MICRO DEVICES INC36 citations93
US6498093B1Dec 24, 2002

Formation without vacuum break of sacrificial layer that dissolves in acidic activation solution within interconnect

ADVANCED MICRO DEVICES INC20 citations93
US6495443B1Dec 17, 2002

Method of re-working copper damascene wafers

ADVANCED MICRO DEVICES INC22 citations93
US6455425B1Sep 24, 2002

Selective deposition process for passivating top interface of damascene-type Cu interconnect lines

ADVANCED MICRO DEVICES INC53 citations93
US6440830B1Aug 27, 2002

Method of copper-polysilicon gate formation

ADVANCED MICRO DEVICES INC26 citations93
US6433379B1Aug 13, 2002

Tantalum anodization for in-laid copper metallization capacitor

ADVANCED MICRO DEVICES INC43 citations93
US6358848B1Mar 19, 2002

Method of reducing electromigration in copper lines by forming an interim layer of calcium-doped copper seed layer in a chemical solution and semiconductor device thereby formed

ADVANCED MICRO DEVICES INC29 citations93
US6127282AOct 3, 2000

Method for removing copper residue from surfaces of a semiconductor wafer

ADVANCED MICRO DEVICES INC35 citations93
US6083842AJul 4, 2000

Fabrication of a via plug having high aspect ratio with a diffusion barrier layer effectively surrounding the via plug

ADVANCED MICRO DEVICES INC38 citations93
US6033982AMar 7, 2000

Scaled interconnect anodization for high frequency applications

ADVANCED MICRO DEVICES INC23 citations93
US6717236B1Apr 6, 2004

Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed

ADVANCED MICRO DEVICES INC22 citations92
US6660633B1Dec 9, 2003

Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formed

ADVANCED MICRO DEVICES INC36 citations92
US6624075B1Sep 23, 2003

Method of reducing electromigration in a copper line by Zinc-Doping of a copper surface from an electroplated copper-zinc alloy thin film and a semiconductor device thereby formed

ADVANCED MICRO DEVICES INC46 citations92
US6528412B1Mar 4, 2003

Depositing an adhesion skin layer and a conformal seed layer to fill an interconnect opening

ADVANCED MICRO DEVICES INC35 citations92
US6426293B1Jul 30, 2002

Minimizing resistance and electromigration of interconnect by adjusting anneal temperature and amount of seed layer dopant

ADVANCED MICRO DEVICES INC22 citations92
US6974767B1Dec 13, 2005

Chemical solution for electroplating a copper-zinc alloy thin film

ADVANCED MICRO DEVICES INC19 citations84
US6943096B1Sep 13, 2005

Semiconductor component and method of manufacture

ADVANCED MICRO DEVICES INC13 citations84
US6936925B1Aug 30, 2005

Semiconductor device having copper lines with reduced electromigration using an electroplated interim copper-zinc alloy film on a copper surface

ADVANCED MICRO DEVICES INC15 citations84
US6646353B1Nov 11, 2003

Semiconductor device having reduced electromigration in copper lines with calcium-doped copper surfaces formed by using a chemical solution

ADVANCED MICRO DEVICES INC8 citations74
US6509262B1Jan 21, 2003

Method of reducing electromigration in copper lines by calcium-doping copper surfaces in a chemical solution

ADVANCED MICRO DEVICES INC8 citations74
US6486560B1Nov 26, 2002

Semiconductor device fabricated by a method of reducing electromigration in copper lines by forming an interim layer of calcium-doped copper seed layer in a chemical solution

ADVANCED MICRO DEVICES INC9 citations74
US6472310B1Oct 29, 2002

Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure

ADVANCED MICRO DEVICES INC8 citations74

APPLIED MATERIALS INC

7 patents

ENDRESS HAUSER GMBH CO

1 patent

(unassigned)

1 patent

AMD

1 patent

ADVANCED MICRO DEVICE

1 patent

KLA TENCOR TECH CORP

1 patent

Showing the top 50 of 77 patents by PatentIndex Score.