Inventor
LOPATIN SERGEY
US77 patents
⚠️ This page may combine multiple inventors who share the name “LOPATIN SERGEY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
38 patentsUS6515368B1Feb 4, 2003
Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copper
ADVANCED MICRO DEVICES INC130 citations99
US6420189B1Jul 16, 2002
Superconducting damascene interconnected for integrated circuit
ADVANCED MICRO DEVICES INC166 citations99
US6291348B1Sep 18, 2001
Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
ADVANCED MICRO DEVICES INC256 citations99
US6245670B1Jun 12, 2001
Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
ADVANCED MICRO DEVICES INC287 citations99
US6242349B1Jun 5, 2001
Method of forming copper/copper alloy interconnection with reduced electromigration
ADVANCED MICRO DEVICES INC439 citations99
US6482656B1Nov 19, 2002
Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit
ADVANCED MICRO DEVICES INC88 citations98
US6528409B1Mar 4, 2003
Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
ADVANCED MICRO DEVICES INC624 citations97
US6447933B1Sep 10, 2002
Formation of alloy material using alternating depositions of alloy doping element and bulk material
ADVANCED MICRO DEVICES INC115 citations97
US6630741B1Oct 7, 2003
Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed
ADVANCED MICRO DEVICES INC58 citations96
US6387818B1May 14, 2002
Method of porous dielectric formation with anodic template
ADVANCED MICRO DEVICES INC54 citations96
US6350687B1Feb 26, 2002
Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film
ADVANCED MICRO DEVICES INC75 citations96
US6291082B1Sep 18, 2001
Method of electroless ag layer formation for cu interconnects
ADVANCED MICRO DEVICES INC59 citations96
US6103624AAug 15, 2000
Method of improving Cu damascene interconnect reliability by laser anneal before barrier polish
ADVANCED MICRO DEVICES INC65 citations96
US6228759B1May 8, 2001
Method of forming an alloy precipitate to surround interconnect to minimize electromigration
ADVANCED MICRO DEVICES INC69 citations94
US6689689B1Feb 10, 2004
Selective deposition process for allowing damascene-type Cu interconnect lines
ADVANCED MICRO DEVICES INC26 citations93
US6559546B1May 6, 2003
Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure
ADVANCED MICRO DEVICES INC16 citations93
US6500743B1Dec 31, 2002
Method of copper-polysilicon T-gate formation
ADVANCED MICRO DEVICES INC36 citations93
US6498093B1Dec 24, 2002
Formation without vacuum break of sacrificial layer that dissolves in acidic activation solution within interconnect
ADVANCED MICRO DEVICES INC20 citations93
US6495443B1Dec 17, 2002
Method of re-working copper damascene wafers
ADVANCED MICRO DEVICES INC22 citations93
US6455425B1Sep 24, 2002
Selective deposition process for passivating top interface of damascene-type Cu interconnect lines
ADVANCED MICRO DEVICES INC53 citations93
US6440830B1Aug 27, 2002
Method of copper-polysilicon gate formation
ADVANCED MICRO DEVICES INC26 citations93
US6433379B1Aug 13, 2002
Tantalum anodization for in-laid copper metallization capacitor
ADVANCED MICRO DEVICES INC43 citations93
US6358848B1Mar 19, 2002
Method of reducing electromigration in copper lines by forming an interim layer of calcium-doped copper seed layer in a chemical solution and semiconductor device thereby formed
ADVANCED MICRO DEVICES INC29 citations93
US6127282AOct 3, 2000
Method for removing copper residue from surfaces of a semiconductor wafer
ADVANCED MICRO DEVICES INC35 citations93
US6083842AJul 4, 2000
Fabrication of a via plug having high aspect ratio with a diffusion barrier layer effectively surrounding the via plug
ADVANCED MICRO DEVICES INC38 citations93
US6033982AMar 7, 2000
Scaled interconnect anodization for high frequency applications
ADVANCED MICRO DEVICES INC23 citations93
US6717236B1Apr 6, 2004
Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed
ADVANCED MICRO DEVICES INC22 citations92
US6660633B1Dec 9, 2003
Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formed
ADVANCED MICRO DEVICES INC36 citations92
US6624075B1Sep 23, 2003
Method of reducing electromigration in a copper line by Zinc-Doping of a copper surface from an electroplated copper-zinc alloy thin film and a semiconductor device thereby formed
ADVANCED MICRO DEVICES INC46 citations92
US6528412B1Mar 4, 2003
Depositing an adhesion skin layer and a conformal seed layer to fill an interconnect opening
ADVANCED MICRO DEVICES INC35 citations92
US6426293B1Jul 30, 2002
Minimizing resistance and electromigration of interconnect by adjusting anneal temperature and amount of seed layer dopant
ADVANCED MICRO DEVICES INC22 citations92
US6974767B1Dec 13, 2005
Chemical solution for electroplating a copper-zinc alloy thin film
ADVANCED MICRO DEVICES INC19 citations84
US6943096B1Sep 13, 2005
Semiconductor component and method of manufacture
ADVANCED MICRO DEVICES INC13 citations84
US6936925B1Aug 30, 2005
Semiconductor device having copper lines with reduced electromigration using an electroplated interim copper-zinc alloy film on a copper surface
ADVANCED MICRO DEVICES INC15 citations84
US6646353B1Nov 11, 2003
Semiconductor device having reduced electromigration in copper lines with calcium-doped copper surfaces formed by using a chemical solution
ADVANCED MICRO DEVICES INC8 citations74
US6509262B1Jan 21, 2003
Method of reducing electromigration in copper lines by calcium-doping copper surfaces in a chemical solution
ADVANCED MICRO DEVICES INC8 citations74
US6486560B1Nov 26, 2002
Semiconductor device fabricated by a method of reducing electromigration in copper lines by forming an interim layer of calcium-doped copper seed layer in a chemical solution
ADVANCED MICRO DEVICES INC9 citations74
US6472310B1Oct 29, 2002
Tin palladium activation with maximized nuclei density and uniformity on barrier material in interconnect structure
ADVANCED MICRO DEVICES INC8 citations74
APPLIED MATERIALS INC
7 patentsUS7341633B2Mar 11, 2008
Apparatus for electroless deposition
APPLIED MATERIALS INC230 citations98
US7704352B2Apr 27, 2010
High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate
APPLIED MATERIALS INC24 citations92
US7256111B2Aug 14, 2007
Pretreatment for electroless deposition
APPLIED MATERIALS INC40 citations92
US7205233B2Apr 17, 2007
Method for forming CoWRe alloys by electroless deposition
APPLIED MATERIALS INC21 citations92
US7534298B2May 19, 2009
Apparatus and method of detecting the electroless deposition endpoint
APPLIED MATERIALS INC10 citations84
US7273813B2Sep 25, 2007
Wafer cleaning solution for cobalt electroless application
APPLIED MATERIALS INC11 citations84
US7799182B2Sep 21, 2010
Electroplating on roll-to-roll flexible solar cell substrates
APPLIED MATERIALS INC13 citations83
ENDRESS HAUSER GMBH CO
1 patent(unassigned)
1 patentAMD
1 patentADVANCED MICRO DEVICE
1 patentKLA TENCOR TECH CORP
1 patentShowing the top 50 of 77 patents by PatentIndex Score.