Inventor

CHANG I-MING

TW37 patents

⚠️ This page may combine multiple inventors who share the name “CHANG I-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG I-MING

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device structure and methods of forming the same

Semiconductor device structure

Gate structures in semiconductor devices

Multi-threshold gate structure with doped gate dielectric layer

Semiconductor device structure and method for forming the same

Semiconductor arrangement and method of manufacture

Semiconductor structure and method of forming the same

Method for forming semiconductor device structure having oxide layer

Dipoles in semiconductor devices

Semiconductor devices with implanted STI regions and methods of forming the same

Gate structures in semiconductor devices

Semiconductor structure

Semiconductor device structure including dielectric region with plurality of different oxidation regions

Semiconductor device structure having gate dielectric layer

Semiconductor device with conformal source/drain layer

Semiconductor device structure

Gate structures in semiconductor devices

Semiconductor structure

Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof

Semiconductor device including a Fin-FET and method of manufacturing the same

Semiconductor device including interface layer and method of fabricating thereof

Semiconductor device and forming method thereof

Semiconductor device including a Fin-FET and method of manufacturing the same

Semiconductor device including a Fin-FET and method of manufacturing the same

Semiconductor device

Method for forming semiconductor device structure

Semiconductor device including interface layer and method of fabricating thereof

Dipoles in semiconductor devices

Semiconductor device including a Fin-FET and method of manufacturing the same

Curved wafer processing method and apparatus

Semiconductor device and manufacturing method thereof

Semiconductor device having strained channel and method for manufacturing the same

High-K dielectric materials with dipole layer

TAIWAN SEMICONDUCTOR MFG

Flash memory cell having multi-program channels

FinFET device with gate oxide layer

Structure and method for integrated devices on different substartes with interfacial engineering

CHANG I-MING

Curved wafer processing on method and apparatus