Inventor
MINEJI AKIRA
TW29 patents
⚠️ This page may combine multiple inventors who share the name “MINEJI AKIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10854503B2Dec 1, 2020
Semiconductor structure with air gap and method sealing the air gap
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11646234B2May 9, 2023
Method for FinFET fabrication and structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11264485B2Mar 1, 2022
Spacer structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11018053B2May 25, 2021
Semiconductor structure with material modification and low resistance plug
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10692760B2Jun 23, 2020
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12363980B2Jul 15, 2025
Spacer structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12347725B2Jul 1, 2025
Semiconductor structure with material modification and low resistance plug
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12224210B2Feb 11, 2025
Method for FinFet fabrication and structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165912B2Dec 10, 2024
Semiconductor structure with air gap and method sealing the air gap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080779B2Sep 3, 2024
Capping layer for gate electrodes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051620B2Jul 30, 2024
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854871B2Dec 26, 2023
Semiconductor structure with material modification and low resistance plug
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728414B2Aug 15, 2023
Semiconductor device including a Fin-FET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688631B2Jun 27, 2023
Semiconductor structure with air gap and method sealing the air gap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11398404B2Jul 26, 2022
Semiconductor structure with air gap and method sealing the air gap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11373902B2Jun 28, 2022
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11373910B2Jun 28, 2022
Semiconductor device including a Fin-FET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11251087B2Feb 15, 2022
Semiconductor device including a Fin-FET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11164956B2Nov 2, 2021
Capping layer for gate electrodes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056393B2Jul 6, 2021
Method for FinFET fabrication and structure thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10685884B2Jun 16, 2020
Semiconductor device including a Fin-FET and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
NEC CORP
6 patentsUS6372591B1Apr 16, 2002
Fabrication method of semiconductor device using ion implantation
NEC CORP67 citations96
US5567959AOct 22, 1996
Laminated complementary thin film transistor device with improved threshold adaptability
NEC CORP80 citations96
US6492218B1Dec 10, 2002
Use of a hard mask in the manufacture of a semiconductor device
NEC CORP33 citations92
US5915196AJun 22, 1999
Method of forming shallow diffusion layers in a semiconductor substrate in the vicinity of a gate electrode
NEC CORP47 citations92
US5807770ASep 15, 1998
Fabrication method of semiconductor device containing semiconductor active film
NEC CORP44 citations92
US6017823AJan 25, 2000
Method of forming a MOS field effect transistor with improved gate side wall insulation films
NEC CORP48 citations91