Inventor
CHOU CHIEN-CHIH
TW79 patents
⚠️ This page may combine multiple inventors who share the name “CHOU CHIEN-CHIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
40 patentsUS10050033B1Aug 14, 2018
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations94
US11410995B1Aug 9, 2022
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US10868106B2Dec 15, 2020
Semiconductor structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10516029B2Dec 24, 2019
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10340357B2Jul 2, 2019
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9691895B2Jun 27, 2017
Lateral MOSFET
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12211926B2Jan 28, 2025
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US12191365B2Jan 7, 2025
Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11677022B2Jun 13, 2023
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11302691B2Apr 12, 2022
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11276684B2Mar 15, 2022
Recessed composite capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10950708B2Mar 16, 2021
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10804220B2Oct 13, 2020
Dishing prevention columns for bipolar junction transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10790279B2Sep 29, 2020
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10748899B2Aug 18, 2020
Epitaxial source and drain structures for high voltage devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10553583B2Feb 4, 2020
Boundary region for high-k-metal-gate(HKMG) integration technology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10535752B2Jan 14, 2020
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510750B2Dec 17, 2019
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10263064B2Apr 16, 2019
Semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12021140B2Jun 25, 2024
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11823959B2Nov 21, 2023
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11133226B2Sep 28, 2021
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10269703B2Apr 23, 2019
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11527531B2Dec 13, 2022
Recessed gate for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11251286B2Feb 15, 2022
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11011619B2May 18, 2021
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10991693B2Apr 27, 2021
Boundary region for high-k-metal-gate (HKMG) integration technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12439679B2Oct 7, 2025
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426296B2Sep 23, 2025
High-voltage semiconductor devices and methods of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369377B2Jul 22, 2025
Semiconductor structure and forming method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12261218B2Mar 25, 2025
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176407B2Dec 24, 2024
Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12100706B2Sep 24, 2024
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810973B2Nov 7, 2023
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11799007B2Oct 24, 2023
Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569363B2Jan 31, 2023
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469307B2Oct 11, 2022
Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930776B2Feb 23, 2021
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356658B2Jul 8, 2025
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349454B2Jul 1, 2025
Checkerboard dummy design for epitaxial open ratio
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
TAIWAN SEMICONDUCTOR MFG
7 patentsUS7232762B2Jun 19, 2007
Method for forming an improved low power SRAM contact
TAIWAN SEMICONDUCTOR MFG34 citations91
US9318366B2Apr 19, 2016
Method of forming integrated circuit having modified isolation structure
TAIWAN SEMICONDUCTOR MFG6 citations84
US7714392B2May 11, 2010
Method for forming an improved low power SRAM contact
TAIWAN SEMICONDUCTOR MFG13 citations82
US7091535B2Aug 15, 2006
High voltage device embedded non-volatile memory cell and fabrication method
TAIWAN SEMICONDUCTOR MFG12 citations80
US7816744B2Oct 19, 2010
Gate electrodes of HVMOS devices having non-uniform doping concentrations
TAIWAN SEMICONDUCTOR MFG7 citations74
US6703282B1Mar 9, 2004
Method of reducing NMOS device current degradation via formation of an HTO layer as an underlying component of a nitride-oxide sidewall spacer
TAIWAN SEMICONDUCTOR MFG12 citations69
US6376156B1Apr 23, 2002
Prevent defocus issue on wafer with tungsten coating on back-side
TAIWAN SEMICONDUCTOR MFG2 citations62
SU RU-YI
2 patentsLIU HUEI-RU
1 patentShowing the top 50 of 79 patents by PatentIndex Score.