Inventor
Chen yi-huan
TW54 patents
Patents
50 patentsUS10050033B1Aug 14, 2018
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations94
US10516029B2Dec 24, 2019
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10340357B2Jul 2, 2019
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9831340B2Nov 28, 2017
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US12211926B2Jan 28, 2025
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US12191365B2Jan 7, 2025
Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11677022B2Jun 13, 2023
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11302691B2Apr 12, 2022
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11276684B2Mar 15, 2022
Recessed composite capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10950708B2Mar 16, 2021
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10804220B2Oct 13, 2020
Dishing prevention columns for bipolar junction transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10790279B2Sep 29, 2020
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10748899B2Aug 18, 2020
Epitaxial source and drain structures for high voltage devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10553583B2Feb 4, 2020
Boundary region for high-k-metal-gate(HKMG) integration technology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10535752B2Jan 14, 2020
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510750B2Dec 17, 2019
High voltage integration for HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10177043B1Jan 8, 2019
Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technology
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9853149B1Dec 26, 2017
Floating grid and crown-shaping poly for improving ILD CMP dishing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12021140B2Jun 25, 2024
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11823959B2Nov 21, 2023
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11133226B2Sep 28, 2021
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10937785B2Mar 2, 2021
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11527531B2Dec 13, 2022
Recessed gate for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11251286B2Feb 15, 2022
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11011619B2May 18, 2021
Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10991693B2Apr 27, 2021
Boundary region for high-k-metal-gate (HKMG) integration technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12439679B2Oct 7, 2025
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12261218B2Mar 25, 2025
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211935B2Jan 28, 2025
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176407B2Dec 24, 2024
Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810973B2Nov 7, 2023
Semiconductor structure and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11799007B2Oct 24, 2023
Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569363B2Jan 31, 2023
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508845B2Nov 22, 2022
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469307B2Oct 11, 2022
Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356658B2Jul 8, 2025
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349454B2Jul 1, 2025
Checkerboard dummy design for epitaxial open ratio
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12255207B2Mar 18, 2025
Boundary design for high-voltage integration on HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11855091B2Dec 26, 2023
Boundary design for high-voltage integration on HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11417649B2Aug 16, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11410999B2Aug 9, 2022
Boundary design for high-voltage integration on HKMG technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11004844B2May 11, 2021
Recessed STI as the gate dielectric of HV device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10916542B2Feb 9, 2021
Recessed STI as the gate dielectric of HV device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12363998B2Jul 15, 2025
Recessed gate for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11948938B2Apr 2, 2024
Recessed gate for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12557335B2Feb 17, 2026
Transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11444169B2Sep 13, 2022
Transistor device with a gate structure having recesses overlying an interface between isolation and device regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804093B2Oct 13, 2020
Dishing prevention columns for bipolar junction transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10535568B2Jan 14, 2020
Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510685B2Dec 17, 2019
Dishing prevention columns for bipolar junction transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
Showing the top 50 of 54 patents by PatentIndex Score.