Inventor · disambiguated record
Mitsutaka Katada
Also filed as: KATADA MITSUTAKA
15 granted patents·1 pending application·374 citations·filing 1991–2008
94Inventor score
Top patents by PatentIndex Score
16 records- 0192US5532176AProcess for fabricating a complementary MIS transistorNIPPON DENSO CO·Filed 1994·Granted Jul 2, 1996·104 cites·18 claims
- 0281US5334870AComplementary MIS transistor and a fabrication process thereofNIPPON DENSO CO·Filed 1993·Granted Aug 2, 1994·56 cites·9 claims
- 0380US7642653B2Semiconductor device, wiring of semiconductor device, and method of forming wiringDENSO CORP·Filed 2007·Granted Jan 5, 2010·13 cites·22 claims
- 0477US6337249B1Semiconductor device and fabrication process thereofNIPPON DENSO CO·Filed 2000·Granted Jan 8, 2002·22 cites·20 claims
- 0575US6914288B2EEPROM and EEPROM manufacturing methodDENSO CORP·Filed 2003·Granted Jul 5, 2005·22 cites·9 claims
- 0674US5383993AMethod of bonding semiconductor substratesNIPPON SOKEN·Filed 1993·Granted Jan 24, 1995·57 cites·21 claims
- 0768US5753556AMethod of fabricating a MIS transistorNIPPON DENSO CO·Filed 1996·Granted May 19, 1998·25 cites·17 claims
- 0864US8410573B2SOI (silicon on insulator) structure semiconductor device and method of manufacturing the sameOHTSUKI HIROSHI·Filed 2008·Granted Apr 2, 2013·2 cites·13 claims
- 0961US6339557B1Charge retention lifetime evaluation method for nonvolatile semiconductor memoryDENSO CORP·Filed 2000·Granted Jan 15, 2002·12 cites·30 claims
- 1061US5223450AMethod of producing semiconductor substrate having dielectric separation regionNIPPON SOKEN·Filed 1991·Granted Jun 29, 1993·33 cites·20 claims
- 1155US7796442B2Nonvolatile semiconductor memory device and method of erasing and programming the sameDENSO CORP·Filed 2008·Granted Sep 14, 2010·1 cites·11 claims
- 1251US6236085B1Semiconductor memory device having high-concentration region around electric-field moderating layer in substrateDENSO CORP·Filed 1997·Granted May 22, 2001·14 cites·10 claims
- 1342US8035154B2Semiconductor device including a plurality of memory cells with no difference in erasing propertiesDENSO CORP·Filed 2008·Granted Oct 11, 2011·0 cites·11 claims
- 1442US2008258304A1Semiconductor device having multiple wiring layersDENSO CORP·Filed 2008·Application pending·0 cites
- 1538US5736770ASemiconductor device with conductive connecting layer and abutting insulator section made of oxide of same materialNIPPON DENSO CO·Filed 1994·Granted Apr 7, 1998·9 cites·29 claims
- 1635US5675167AEnhancement-type semiconductor having reduced leakage currentNIPPON DENSO CO·Filed 1995·Granted Oct 7, 1997·4 cites·10 claims
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