Inventor
CHAN TIEN-CHEN
TW19 patents
Patents
19 patentsUS10217750B1Feb 26, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP9 citations83
US9397214B1Jul 19, 2016
Semiconductor device
UNITED MICROELECTRONICS CORP10 citations82
US10643997B2May 5, 2020
Semiconductor device with metal gates
UNITED MICROELECTRONICS CORP2 citations73
US9754938B1Sep 5, 2017
Semiconductor device and method of fabricating the same
UNITED MICROELECTRONICS CORP3 citations73
US10608093B2Mar 31, 2020
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP2 citations72
US10497704B2Dec 3, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP3 citations72
US9680022B1Jun 13, 2017
Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same
UNITED MICROELECTRONICS CORP2 citations72
US9373705B1Jun 21, 2016
Manufacturing method of a fin-shaped field effect transistor and a device thereof
UNITED MICROELECTRONICS CORP3 citations72
US10056288B1Aug 21, 2018
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations71
US10608086B2Mar 31, 2020
Semiconductor structure with diffusion barrier region and manufacturing method thereof
UNITED MICROELECTRONICS CORP1 citations62
US11502180B2Nov 15, 2022
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP0 citations61
US9214551B2Dec 15, 2015
Method for fabricating semiconductor device, and semiconductor device made thereby
UNITED MICROELECTRONICS CORP2 citations61
US9966468B2May 8, 2018
Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US10847517B2Nov 24, 2020
Method for forming semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US10373958B2Aug 6, 2019
Semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US10332889B2Jun 25, 2019
Method of manufacturing a semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US9899498B2Feb 20, 2018
Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same
UNITED MICROELECTRONICS CORP1 citations51
US9660086B2May 23, 2017
Fin-shaped field effect transistor
UNITED MICROELECTRONICS CORP0 citations51
US10056388B2Aug 21, 2018
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations49