Inventor
CHAN SHU-YEN
TW34 patents
⚠️ This page may combine multiple inventors who share the name “CHAN SHU-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
24 patentsUS10217750B1Feb 26, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP9 citations83
US9673324B1Jun 6, 2017
MOS device with epitaxial structure associated with source/drain region and method of forming the same
UNITED MICROELECTRONICS CORP14 citations83
US10608093B2Mar 31, 2020
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP2 citations72
US10497704B2Dec 3, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP3 citations72
US9680022B1Jun 13, 2017
Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same
UNITED MICROELECTRONICS CORP2 citations72
US10056288B1Aug 21, 2018
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations71
US7927954B2Apr 19, 2011
Method for fabricating strained-silicon metal-oxide semiconductor transistors
UNITED MICROELECTRONICS CORP2 citations63
US10608086B2Mar 31, 2020
Semiconductor structure with diffusion barrier region and manufacturing method thereof
UNITED MICROELECTRONICS CORP1 citations62
US7435640B2Oct 14, 2008
Method of fabricating gate structure
UNITED MICROELECTRONICS CORP4 citations62
US11502180B2Nov 15, 2022
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP0 citations61
US7811892B2Oct 12, 2010
Multi-step annealing process
UNITED MICROELECTRONICS CORP2 citations60
US11770924B2Sep 26, 2023
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations59
US11631679B2Apr 18, 2023
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations59
US11393826B2Jul 19, 2022
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP0 citations59
US7601404B2Oct 13, 2009
Method for switching decoupled plasma nitridation processes of different doses
UNITED MICROELECTRONICS CORP4 citations59
US9966468B2May 8, 2018
Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US8853740B2Oct 7, 2014
Strained silicon channel semiconductor structure
UNITED MICROELECTRONICS CORP0 citations52
US10847517B2Nov 24, 2020
Method for forming semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US10373958B2Aug 6, 2019
Semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US10332889B2Jun 25, 2019
Method of manufacturing a semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US9899498B2Feb 20, 2018
Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same
UNITED MICROELECTRONICS CORP1 citations51
US8841193B2Sep 23, 2014
Semiconductor structure and method for slimming spacer
UNITED MICROELECTRONICS CORP1 citations51
US7709316B2May 4, 2010
Method of fabricating gate structure
UNITED MICROELECTRONICS CORP0 citations51
US10056388B2Aug 21, 2018
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations49