Inventor
SHISHIDO KIYOKAZU
JP16 patents
⚠️ This page may combine multiple inventors who share the name “SHISHIDO KIYOKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
10 patentsUS10355017B1Jul 16, 2019
CMOS devices containing asymmetric contact via structures and method of making the same
SANDISK TECHNOLOGIES LLC45 citations93
US10256099B1Apr 9, 2019
Transistors having semiconductor-metal composite gate electrodes containing different thickness interfacial dielectrics and methods of making thereof
SANDISK TECHNOLOGIES LLC33 citations92
US10770459B2Sep 8, 2020
CMOS devices containing asymmetric contact via structures
SANDISK TECHNOLOGIES LLC14 citations85
US10515897B2Dec 24, 2019
Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same
SANDISK TECHNOLOGIES LLC14 citations85
US10515907B2Dec 24, 2019
Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same
SANDISK TECHNOLOGIES LLC13 citations83
US11069707B2Jul 20, 2021
Variable die size memory device and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC13 citations81
US10804284B2Oct 13, 2020
Three-dimensional memory device containing bidirectional taper staircases and methods of making the same
SANDISK TECHNOLOGIES LLC6 citations72
US11876096B2Jan 16, 2024
Field effect transistors with reduced gate fringe area and method of making the same
SANDISK TECHNOLOGIES LLC0 citations51
US11710740B2Jul 25, 2023
Field effect transistors with reduced gate fringe area and method of making the same
SANDISK TECHNOLOGIES LLC0 citations51
US12032837B2Jul 9, 2024
Non-volatile memory with reduced word line switch area
SANDISK TECHNOLOGIES LLC0 citations50
SANDISK TECHNOLOGIES INC
5 patentsUS9524904B2Dec 20, 2016
Early bit line air gap formation
SANDISK TECHNOLOGIES INC12 citations80
US9391081B1Jul 12, 2016
Metal indentation to increase inter-metal breakdown voltage
SANDISK TECHNOLOGIES INC4 citations71
US12426354B2Sep 23, 2025
Field effect transistors with reduced gate fringe area and method of making the same
SANDISK TECHNOLOGIES INC0 citations51
US9607997B1Mar 28, 2017
Metal line with increased inter-metal breakdown voltage
SANDISK TECHNOLOGIES INC0 citations50
US9478461B2Oct 25, 2016
Conductive line structure with openings
SANDISK TECHNOLOGIES INC0 citations49