Inventor
INDUKURI TEJASWI K
US23 patents
⚠️ This page may combine multiple inventors who share the name “INDUKURI TEJASWI K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
20 patentsUS9997457B2Jun 12, 2018
Cobalt based interconnects and methods of fabrication thereof
INTEL CORP12 citations92
US9691657B2Jun 27, 2017
Interconnect wires including relatively low resistivity cores
INTEL CORP6 citations84
US10026649B2Jul 17, 2018
Decoupled via fill
INTEL CORP4 citations81
US10832951B2Nov 10, 2020
Interconnect wires including relatively low resistivity cores
INTEL CORP1 citations73
US10658586B2May 19, 2020
RRAM devices and their methods of fabrication
INTEL CORP4 citations73
US10068845B2Sep 4, 2018
Seam healing of metal interconnects
INTEL CORP3 citations73
US10700007B2Jun 30, 2020
Cobalt based interconnects and methods of fabrication thereof
INTEL CORP3 citations72
US10468298B2Nov 5, 2019
Decoupled via fill
INTEL CORP3 citations70
US12266568B2Apr 1, 2025
Interconnect wires including relatively low resistivity cores
INTEL CORP0 citations62
US11881432B2Jan 23, 2024
Interconnect wires including relatively low resistivity cores
INTEL CORP0 citations62
US11569126B2Jan 31, 2023
Interconnect wires including relatively low resistivity cores
INTEL CORP0 citations62
US11328993B2May 10, 2022
Cobalt based interconnects and methods of fabrication thereof
INTEL CORP0 citations62
US11094587B2Aug 17, 2021
Use of noble metals in the formation of conductive connectors
INTEL CORP0 citations62
US10903114B2Jan 26, 2021
Decoupled via fill
INTEL CORP0 citations60
US10629525B2Apr 21, 2020
Seam healing of metal interconnects
INTEL CORP0 citations52
US10381556B2Aug 13, 2019
Spin transfer torque memory (STTM), methods of forming the same using a non-conformal insulator, and devices including the same
INTEL CORP0 citations52
US9349636B2May 24, 2016
Interconnect wires including relatively low resistivity cores
INTEL CORP0 citations52
US10211098B2Feb 19, 2019
Decoupled via fill
INTEL CORP0 citations49
US9659869B2May 23, 2017
Forming barrier walls, capping, or alloys /compounds within metal lines
INTEL CORP1 citations49
US10580975B2Mar 3, 2020
Spin transfer torque memory (STTM), methods of forming the same using volatile compound forming elements, and devices including the same
INTEL CORP0 citations42