P

Inventor

NIAN JUN-NAN

TW19 patents
⚠️ This page may combine multiple inventors who share the name “NIAN JUN-NAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US10269918B2Apr 23, 2019

N-work function metal with crystal structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9870995B2Jan 16, 2018

Formation of copper layer structure with self anneal strain improvement

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11603602B2Mar 14, 2023

Method for controlling electrochemical deposition to avoid defects in interconnect structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11598016B2Mar 7, 2023

Electrochemical plating system and method of using

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11230784B2Jan 25, 2022

Electrochemical plating system and method of using

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133395B2Sep 28, 2021

N-work function metal with crystal structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11015260B2May 25, 2021

Method for controlling electrochemical deposition to avoid defects in interconnect structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9698019B2Jul 4, 2017

N-work function metal with crystal structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12341055B2Jun 24, 2025

Method of manufacturing semiconductor devices and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10840184B2Nov 17, 2020

Formation of copper layer structure with self anneal strain improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879629B2Dec 29, 2020

Method of electroplating metal into recessed feature and electroplating layer in recessed feature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10749278B2Aug 18, 2020

Method of electroplating metal into recessed feature and electroplating layer in recessed feature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12080751B2Sep 3, 2024

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12362273B2Jul 15, 2025

Conductive structures and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
US12557619B2Feb 17, 2026

Semiconductor structure including multiple barrier layers and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations43

NIAN JUN-NAN

1 patent

TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD

1 patent

CHANG SHIH-CHIEH

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent