Inventor
WANG TING-CHUN
TW75 patents
⚠️ This page may combine multiple inventors who share the name “WANG TING-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
27 patentsUS9876114B2Jan 23, 2018
Structure and method for 3D FinFET metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD61 citations98
US9577102B1Feb 21, 2017
Method of forming gate and finFET
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations91
US10192988B2Jan 29, 2019
Flat STI surface for gate oxide uniformity in Fin FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9728646B2Aug 8, 2017
Flat STI surface for gate oxide uniformity in Fin FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10629708B2Apr 21, 2020
Semiconductor device structure with barrier layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US9478581B2Oct 25, 2016
Grids in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9406675B1Aug 2, 2016
FinFET structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10026838B2Jul 17, 2018
Fin-type field effect transistor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations80
US9543234B2Jan 10, 2017
In-situ formation of silicon and tantalum containing barrier
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10886226B2Jan 5, 2021
Conductive contact having staircase barrier layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9893185B2Feb 13, 2018
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10192985B2Jan 29, 2019
FinFET with doped isolation insulating layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations68
US12336217B2Jun 17, 2025
Flat STI surface for gate oxide uniformity in Fin FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11011641B2May 18, 2021
Flat STI surface for gate oxide uniformity in Fin FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10998194B2May 4, 2021
Metal gate stack having TaAlCN layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9478660B2Oct 25, 2016
Protection layer on fin of fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11603602B2Mar 14, 2023
Method for controlling electrochemical deposition to avoid defects in interconnect structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11598016B2Mar 7, 2023
Electrochemical plating system and method of using
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11230784B2Jan 25, 2022
Electrochemical plating system and method of using
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024716B2Jun 1, 2021
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11015260B2May 25, 2021
Method for controlling electrochemical deposition to avoid defects in interconnect structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046662B2Jul 23, 2024
Semiconductor device structure with barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11929328B2Mar 12, 2024
Conductive contact having barrier layers with different depths
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11784240B2Oct 10, 2023
Semiconductor device structure with barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11670704B2Jun 6, 2023
Semiconductor device structure with barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11031488B2Jun 8, 2021
Semiconductor device structure with barrier layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11329160B2May 10, 2022
FinFET gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
NVIDIA CORP
12 patentsUS11610435B2Mar 21, 2023
Generative adversarial neural network assisted video compression and broadcast
NVIDIA CORP16 citations94
US11625613B2Apr 11, 2023
Generative adversarial neural network assisted compression and broadcast
NVIDIA CORP6 citations85
US11580395B2Feb 14, 2023
Generative adversarial neural network assisted video reconstruction
NVIDIA CORP8 citations85
US10984286B2Apr 20, 2021
Domain stylization using a neural network model
NVIDIA CORP16 citations85
US12333638B2Jun 17, 2025
Generating images of object motion using one or more neural networks
NVIDIA CORP2 citations73
US11775829B2Oct 3, 2023
Generative adversarial neural network assisted video reconstruction
NVIDIA CORP1 citations72
US11610122B2Mar 21, 2023
Generative adversarial neural network assisted reconstruction
NVIDIA CORP3 citations72
US12592010B2Mar 31, 2026
Neural network-based image lighting
NVIDIA CORP0 citations62
US12506886B2Dec 23, 2025
Video compression using neural networks
NVIDIA CORP0 citations62
US12443853B1Oct 14, 2025
Video synthesis using one or more neural networks
NVIDIA CORP0 citations59
US12425605B2Sep 23, 2025
Image in-painting for irregular holes using partial convolutions
NVIDIA CORP0 citations59
US11934959B2Mar 19, 2024
Video synthesis using one or more neural networks
NVIDIA CORP1 citations59
TAIWAN SEMICONDUCTOR MFG
9 patentsUS9337192B2May 10, 2016
Metal gate stack having TaAlCN layer
TAIWAN SEMICONDUCTOR MFG13 citations93
US6146991ANov 14, 2000
Barrier metal composite layer featuring a thin plasma vapor deposited titanium nitride capping layer
TAIWAN SEMICONDUCTOR MFG31 citations92
US6828226B1Dec 7, 2004
Removal of SiON residue after CMP
TAIWAN SEMICONDUCTOR MFG24 citations90
US9257476B2Feb 9, 2016
Grids in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG11 citations83
US6626741B2Sep 30, 2003
Method for improving thickness uniformity on a semiconductor wafer during chemical mechanical polishing
TAIWAN SEMICONDUCTOR MFG7 citations74
US9337303B2May 10, 2016
Metal gate stack having TiAICN as work function layer and/or blocking/wetting layer
TAIWAN SEMICONDUCTOR MFG6 citations73
US6769959B2Aug 3, 2004
Method and system for slurry usage reduction in chemical mechanical polishing
TAIWAN SEMICONDUCTOR MFG7 citations72
US6645825B1Nov 11, 2003
Planarization of shallow trench isolation (STI)
TAIWAN SEMICONDUCTOR MFG6 citations62
US7304728B2Dec 4, 2007
Test device and method for laser alignment calibration
TAIWAN SEMICONDUCTOR MFG3 citations60
JANGJIAN SHIU-KO
2 patentsShowing the top 50 of 75 patents by PatentIndex Score.