P

Inventor

WANG TING-CHUN

TW75 patents
⚠️ This page may combine multiple inventors who share the name “WANG TING-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

27 patents
US9876114B2Jan 23, 2018

Structure and method for 3D FinFET metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD61 citations98
US9577102B1Feb 21, 2017

Method of forming gate and finFET

TAIWAN SEMICONDUCTOR MFG CO LTD18 citations91
US10192988B2Jan 29, 2019

Flat STI surface for gate oxide uniformity in Fin FET devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9728646B2Aug 8, 2017

Flat STI surface for gate oxide uniformity in Fin FET devices

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10629708B2Apr 21, 2020

Semiconductor device structure with barrier layer and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US9478581B2Oct 25, 2016

Grids in backside illumination image sensor chips and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9406675B1Aug 2, 2016

FinFET structure and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10026838B2Jul 17, 2018

Fin-type field effect transistor and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations80
US9543234B2Jan 10, 2017

In-situ formation of silicon and tantalum containing barrier

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10886226B2Jan 5, 2021

Conductive contact having staircase barrier layers

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9893185B2Feb 13, 2018

Fin field effect transistor and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10192985B2Jan 29, 2019

FinFET with doped isolation insulating layer

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations68
US12336217B2Jun 17, 2025

Flat STI surface for gate oxide uniformity in Fin FET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11011641B2May 18, 2021

Flat STI surface for gate oxide uniformity in Fin FET devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10998194B2May 4, 2021

Metal gate stack having TaAlCN layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9478660B2Oct 25, 2016

Protection layer on fin of fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11603602B2Mar 14, 2023

Method for controlling electrochemical deposition to avoid defects in interconnect structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11598016B2Mar 7, 2023

Electrochemical plating system and method of using

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11230784B2Jan 25, 2022

Electrochemical plating system and method of using

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024716B2Jun 1, 2021

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11015260B2May 25, 2021

Method for controlling electrochemical deposition to avoid defects in interconnect structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046662B2Jul 23, 2024

Semiconductor device structure with barrier layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11929328B2Mar 12, 2024

Conductive contact having barrier layers with different depths

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11784240B2Oct 10, 2023

Semiconductor device structure with barrier layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11670704B2Jun 6, 2023

Semiconductor device structure with barrier layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11031488B2Jun 8, 2021

Semiconductor device structure with barrier layer and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11329160B2May 10, 2022

FinFET gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59

NVIDIA CORP

12 patents

TAIWAN SEMICONDUCTOR MFG

9 patents

JANGJIAN SHIU-KO

2 patents

Showing the top 50 of 75 patents by PatentIndex Score.