Inventor
RUPP ROLAND
DE162 patents
⚠️ This page may combine multiple inventors who share the name “RUPP ROLAND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
16 patentsUS6320205B1Nov 20, 2001
Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode
INFINEON TECHNOLOGIES AG38 citations93
US6905916B2Jun 14, 2005
Method for processing a surface of an SiC semiconductor layer and Schottky contact
INFINEON TECHNOLOGIES AG31 citations92
US6806694B2Oct 19, 2004
Switching regulator with dynamic current limiting and drive circuit for the switching regulator
INFINEON TECHNOLOGIES AG24 citations92
US6406983B1Jun 18, 2002
Process for the thermal annealing of implantation-doped silicon carbide semiconductors
INFINEON TECHNOLOGIES AG19 citations86
US11107893B2Aug 31, 2021
Method for forming a semiconductor device and a semiconductor device
INFINEON TECHNOLOGIES AG6 citations84
US10903078B2Jan 26, 2021
Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device
INFINEON TECHNOLOGIES AG9 citations84
US10074741B2Sep 11, 2018
Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
INFINEON TECHNOLOGIES AG10 citations84
US9997515B2Jun 12, 2018
Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
INFINEON TECHNOLOGIES AG6 citations84
US9741712B2Aug 22, 2017
Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
INFINEON TECHNOLOGIES AG8 citations84
US9704750B2Jul 11, 2017
Method for forming a semiconductor device and a semiconductor device
INFINEON TECHNOLOGIES AG5 citations84
US11069778B2Jul 20, 2021
Silicon carbide components and methods for producing silicon carbide components
INFINEON TECHNOLOGIES AG6 citations83
US10211306B2Feb 19, 2019
Semiconductor device with diode region and trench gate structure
INFINEON TECHNOLOGIES AG15 citations83
US6714397B2Mar 30, 2004
Protection configuration for schottky diode
INFINEON TECHNOLOGIES AG7 citations74
US11031483B2Jun 8, 2021
Forming semiconductor devices in silicon carbide
INFINEON TECHNOLOGIES AG4 citations73
US10700168B2Jun 30, 2020
Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device
INFINEON TECHNOLOGIES AG2 citations73
US10615040B2Apr 7, 2020
Superjunction structure in a power semiconductor device
INFINEON TECHNOLOGIES AG3 citations73
BAYER AG
12 patentsUS4661099AApr 28, 1987
Self-adhesive sheet-like structures, process for their preparation and their use
BAYER AG157 citations99
US5204121AApr 20, 1993
Medicaments having controlled release of the active compound
BAYER AG71 citations95
US6136347AOct 24, 2000
Flavor-masked pharmaceutical compositions
BAYER AG43 citations94
US5695784ADec 9, 1997
Flavor-masked pharmaceutical compositions
BAYER AG89 citations94
US4562069ADec 31, 1985
Two-phase formulation
BAYER AG70 citations94
US4623346ANov 18, 1986
Isobutylene polymer active compound release systems
BAYER AG43 citations92
US4933186AJun 12, 1990
Dihydropyridine depot formulation
BAYER AG34 citations91
US6805881B1Oct 19, 2004
Multiple unit controlled food effect-independent release pharmaceutical preparations and method for preparing the same
BAYER AG43 citations89
US4966772AOct 30, 1990
DHP delayed release preparation
BAYER AG23 citations89
US4092089AMay 30, 1978
Apparatus for the preparation of melt-sprayed spherical phenacetin granules
BAYER AG37 citations89
US4086346AApr 25, 1978
Preparation of melt-sprayed spherical phenacetin granules
BAYER AG32 citations89
US4263253AApr 21, 1981
Process for rendering solids sterile
BAYER AG25 citations76
SIEMENS AG
7 patentsUS6153012ANov 28, 2000
Device for treating a substrate
SIEMENS AG87 citations98
US5964943AOct 12, 1999
Method of producing boron-doped monocrystalline silicon carbide
SIEMENS AG95 citations97
US6299683B1Oct 9, 2001
Method and apparatus for the production of SiC by means of CVD with improved gas utilization
SIEMENS AG56 citations96
US6139624AOct 31, 2000
Process for producing an electrical contact on a SIC surface
SIEMENS AG81 citations96
US5968265AOct 19, 1999
Method for producing silicon carbide monocrystals
SIEMENS AG19 citations92
US6107168AAug 22, 2000
Process for passivating a silicon carbide surface against oxygen
SIEMENS AG13 citations74
US5821599AOct 13, 1998
Temperature sensor having a p-n junction
SIEMENS AG16 citations74
PILZ GMBH & CO
3 patentsUS6532508B2Mar 11, 2003
Control system for controlling safety-critical processes
PILZ GMBH & CO60 citations94
US6832343B2Dec 14, 2004
Apparatus for controlling safety-critical processes
PILZ GMBH & CO48 citations92
US5920715AJul 6, 1999
System architecture permitting verified and unverified programs to execute safely on one processor
PILZ GMBH & CO29 citations91
INFINEON TECHNOLOGIES AUSTRIA
2 patentsPILZ GMBH & CO KG
2 patentsSICED ELECT DEV GMBH & CO KG
2 patentsNILSSON HENRIK
1 patentBERGER RUDOLF
1 patentSCHULZE HANS-JOACHIM
1 patentRUPP ROLAND
1 patentPULLMANN JUERGEN
1 patentSCHWENKEL HANS
1 patentShowing the top 50 of 162 patents by PatentIndex Score.