P

Inventor

RUPP ROLAND

DE162 patents
⚠️ This page may combine multiple inventors who share the name “RUPP ROLAND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

16 patents
US6320205B1Nov 20, 2001

Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode

INFINEON TECHNOLOGIES AG38 citations93
US6905916B2Jun 14, 2005

Method for processing a surface of an SiC semiconductor layer and Schottky contact

INFINEON TECHNOLOGIES AG31 citations92
US6806694B2Oct 19, 2004

Switching regulator with dynamic current limiting and drive circuit for the switching regulator

INFINEON TECHNOLOGIES AG24 citations92
US6406983B1Jun 18, 2002

Process for the thermal annealing of implantation-doped silicon carbide semiconductors

INFINEON TECHNOLOGIES AG19 citations86
US11107893B2Aug 31, 2021

Method for forming a semiconductor device and a semiconductor device

INFINEON TECHNOLOGIES AG6 citations84
US10903078B2Jan 26, 2021

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

INFINEON TECHNOLOGIES AG9 citations84
US10074741B2Sep 11, 2018

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

INFINEON TECHNOLOGIES AG10 citations84
US9997515B2Jun 12, 2018

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

INFINEON TECHNOLOGIES AG6 citations84
US9741712B2Aug 22, 2017

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

INFINEON TECHNOLOGIES AG8 citations84
US9704750B2Jul 11, 2017

Method for forming a semiconductor device and a semiconductor device

INFINEON TECHNOLOGIES AG5 citations84
US11069778B2Jul 20, 2021

Silicon carbide components and methods for producing silicon carbide components

INFINEON TECHNOLOGIES AG6 citations83
US10211306B2Feb 19, 2019

Semiconductor device with diode region and trench gate structure

INFINEON TECHNOLOGIES AG15 citations83
US6714397B2Mar 30, 2004

Protection configuration for schottky diode

INFINEON TECHNOLOGIES AG7 citations74
US11031483B2Jun 8, 2021

Forming semiconductor devices in silicon carbide

INFINEON TECHNOLOGIES AG4 citations73
US10700168B2Jun 30, 2020

Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device

INFINEON TECHNOLOGIES AG2 citations73
US10615040B2Apr 7, 2020

Superjunction structure in a power semiconductor device

INFINEON TECHNOLOGIES AG3 citations73

BAYER AG

12 patents

SIEMENS AG

7 patents

PILZ GMBH & CO

3 patents

INFINEON TECHNOLOGIES AUSTRIA

2 patents

PILZ GMBH & CO KG

2 patents

SICED ELECT DEV GMBH & CO KG

2 patents

NILSSON HENRIK

1 patent

BERGER RUDOLF

1 patent

SCHULZE HANS-JOACHIM

1 patent

RUPP ROLAND

1 patent

PULLMANN JUERGEN

1 patent

SCHWENKEL HANS

1 patent

Showing the top 50 of 162 patents by PatentIndex Score.