Inventor
KAI TADASHI
JP111 patents
⚠️ This page may combine multiple inventors who share the name “KAI TADASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
27 patentsUS7957098B2Jun 7, 2011
Magnetic recording head and magnetic recording apparatus
TOSHIBA KK128 citations99
US8009465B2Aug 30, 2011
Magnetoresistive element
TOSHIBA KK55 citations98
US7663197B2Feb 16, 2010
Magnetoresistive element
TOSHIBA KK97 citations98
US6830824B2Dec 14, 2004
Magnetic recording medium with multiple magnetic layers capable of being exchange coupled at elevated temperatures and magnetic recording apparatus
TOSHIBA KK105 citations98
US6795380B2Sep 21, 2004
Optically-assisted magnetic recording head and optically-assisted magnetic recording apparatus
TOSHIBA KK62 citations96
US8363462B2Jan 29, 2013
Magnetoresistive element
TOSHIBA KK21 citations93
US8036025B2Oct 11, 2011
Magnetoresistive element
TOSHIBA KK33 citations93
US8014193B2Sep 6, 2011
Magnetoresistance effect element and magnetic random access memory
TOSHIBA KK41 citations93
US7924607B2Apr 12, 2011
Magnetoresistance effect element and magnetoresistive random access memory using the same
TOSHIBA KK38 citations93
US7920361B2Apr 5, 2011
Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc
TOSHIBA KK23 citations93
US7518907B2Apr 14, 2009
Magnetoresistive element
TOSHIBA KK15 citations93
US7372648B2May 13, 2008
Optically-assisted magnetic recording head and optically-assisted magnetic recording apparatus
TOSHIBA KK23 citations93
US7355884B2Apr 8, 2008
Magnetoresistive element
TOSHIBA KK28 citations93
US7326982B2Feb 5, 2008
MRAM and method of manufacturing the same
TOSHIBA KK16 citations93
US7190613B2Mar 13, 2007
Magnetic random access memory device having thermal agitation property and high write efficiency
TOSHIBA KK47 citations93
US6982845B2Jan 3, 2006
Magnetic recording apparatus and magnetic recording method
TOSHIBA KK47 citations93
US6949779B2Sep 27, 2005
Magnetoresistive element and magnetic memory
TOSHIBA KK39 citations93
US6881495B2Apr 19, 2005
Magnetic recording medium including functional and recording layers orthogonally exchange coupled
TOSHIBA KK38 citations93
US9219227B2Dec 22, 2015
Magnetoresistive element and magnetic memory
TOSHIBA KK6 citations84
US9178133B2Nov 3, 2015
Magnetoresistive element using specific underlayer material
TOSHIBA KK9 citations84
US9087980B2Jul 21, 2015
Magnetoresistive element and magnetic memory
TOSHIBA KK8 citations84
US8946837B2Feb 3, 2015
Semiconductor storage device with magnetoresistive element
TOSHIBA KK8 citations84
US7599156B2Oct 6, 2009
Magnetoresistive element having specially shaped ferromagnetic layer
TOSHIBA KK11 citations84
US7592189B2Sep 22, 2009
MRAM and method of manufacturing the same
TOSHIBA KK8 citations84
US7330335B2Feb 12, 2008
Magnetic recording medium, magnetic recording apparatus and magnetic recording method
TOSHIBA KK10 citations84
US7245524B2Jul 17, 2007
Magnetic memory device and write method of magnetic memory device
TOSHIBA KK16 citations84
US6930847B2Aug 16, 2005
Magnetic recording-reproducing apparatus
TOSHIBA KK12 citations84
YAMADA KENICHIRO
4 patentsUS8547662B2Oct 1, 2013
Magnetic recording head and magnetic recording apparatus
YAMADA KENICHIRO16 citations92
US8400734B2Mar 19, 2013
Magnetic recording head and magnetic recording apparatus
YAMADA KENICHIRO30 citations92
US8295009B2Oct 23, 2012
Magnetic recording head and magnetic recording apparatus
YAMADA KENICHIRO18 citations92
US8238060B2Aug 7, 2012
Magnetic recording head and magnetic recording apparatus
YAMADA KENICHIRO24 citations92
NAGASE TOSHIHIKO
3 patentsUS8098514B2Jan 17, 2012
Magnetoresistive element and magnetic memory
NAGASE TOSHIHIKO49 citations94
US8670268B2Mar 11, 2014
Magnetoresistive element and magnetic memory using the same
NAGASE TOSHIHIKO9 citations84
US8665639B2Mar 4, 2014
Magnetoresistive element and magnetic memory
NAGASE TOSHIHIKO7 citations83
NAKAYAMA MASAHIKO
3 patentsUS8279663B2Oct 2, 2012
Magnetoresistance effect element and magnetic random access memory
NAKAYAMA MASAHIKO33 citations92
US9269890B2Feb 23, 2016
Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer
NAKAYAMA MASAHIKO11 citations84
US9385304B2Jul 5, 2016
Magnetic memory and method of manufacturing the same
NAKAYAMA MASAHIKO15 citations83
ASAHI CHEMICAL IND
2 patentsDAIBOU TADAOMI
2 patentsKAI TADASHI
2 patentsOZEKI JYUNICHI
1 patentASASHI KASEI KABUSHIKI KAISHA
1 patentTOSHIBA MEMORY CORP
1 patentKITAGAWA EIJI
1 patentWATANABE DAISUKE
1 patentSAWADA KAZUYA
1 patentNISHIYAMA KATSUYA
1 patentShowing the top 50 of 111 patents by PatentIndex Score.