Inventor
SAUNDERS PHILIP A
US4 patents
Patents
4 patentsUS7235812B2Jun 26, 2007
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
IBM41 citations94
US7704815B2Apr 27, 2010
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
IBM5 citations72
US7445977B2Nov 4, 2008
Method of creating defect free high Ge content (> 25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
IBM7 citations72
US7897480B2Mar 1, 2011
Preparation of high quality strained-semiconductor directly-on-insulator substrates
IBM4 citations62