Inventor

XIAO CHANGYONG

US20 patents

⚠️ This page may combine multiple inventors who share the name “XIAO CHANGYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XIAO CHANGYONG

GLOBALFOUNDRIES INC

Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product

Fin removal method

Product comprised of FinFET devices with single diffusion break isolation structures

Threshold voltage control for mixed-type non-planar semiconductor devices

T-shaped single diffusion barrier with single mask approach process flow

FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same

Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting device

Threshold voltage control for mixed-type non-planar semiconductor devices

Shallow trench isolation integration methods and devices formed thereby

T-shaped contacts for semiconductor device

Methods for forming FinFETs with reduced series resistance

Shallow trench isolation integration methods and devices formed thereby

Replacement low-K spacer

Non-planar semiconductor device with multiple-head epitaxial structure on fin

Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads

Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads

Integrated circuits and methods of forming integrated circuits with interlayer dielectric protection

SEMICONDUCTOR MFG INT BEIJING CORP

Method for forming semiconductor structure

Semiconductor devices and fabrication methods thereof

IMEC VZW

Method for processing a FinFET device