Inventor
Ng Jia Hui
SG3 patents
Patents
3 patentsUS10090318B2Oct 2, 2018
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure
MICRON TECHNOLOGY INC23 citations93
US11018155B2May 25, 2021
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure
MICRON TECHNOLOGY INC0 citations61
US10622374B2Apr 14, 2020
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure
MICRON TECHNOLOGY INC0 citations51