Inventor
PARK PANKWI
KR31 patents
Patents
31 patentsUS11069681B2Jul 20, 2021
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD11 citations84
US9252235B2Feb 2, 2016
Semiconductor devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations82
US11688778B2Jun 27, 2023
Semiconductor device including three-dimensional field-effect transistor with curved multi-layered source/drain pattern
SAMSUNG ELECTRONICS CO LTD4 citations74
US12027596B2Jul 2, 2024
Semiconductor device with source/drain pattern including buffer layer
SAMSUNG ELECTRONICS CO LTD2 citations73
US11888026B2Jan 30, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations73
US11948942B2Apr 2, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11631674B2Apr 18, 2023
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11177346B2Nov 16, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11322583B2May 3, 2022
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations71
US12324195B2Jun 3, 2025
Multi-channel field effect transistors with enhanced multi-layered source/drain regions
SAMSUNG ELECTRONICS CO LTD1 citations62
US12249606B2Mar 11, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12396224B2Aug 19, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12119347B2Oct 15, 2024
Method of manufacturing a horizontal-nanosheet field-effect transistor
SAMSUNG ELECTRONICS CO LTD0 citations61
US11710738B2Jul 25, 2023
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12557362B2Feb 17, 2026
Semiconductor device including source/drain pattern with varied germanium concentrations
SAMSUNG ELECTRONICS CO LTD0 citations60
US12453141B2Oct 21, 2025
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11996443B2May 28, 2024
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11676963B2Jun 13, 2023
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US11264381B2Mar 1, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations58
US12538517B2Jan 27, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12477796B2Nov 18, 2025
Semiconductor device including a vertically stacked channel pattern and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12426359B2Sep 23, 2025
Semiconductor device including source/drain regions having triangular tip regions
SAMSUNG ELECTRONICS CO LTD0 citations51
US12328921B2Jun 10, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10181525B2Jan 15, 2019
Semiconductor devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9548389B2Jan 17, 2017
Semiconductor devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12224357B2Feb 11, 2025
Semiconductor transistor device including multiple channel layers with different materials
SAMSUNG ELECTRONICS CO LTD0 citations50
US12543338B2Feb 3, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12453148B2Oct 21, 2025
Integrated circuit device including field-effect transistor with controlled sizes and configurations
SAMSUNG ELECTRONICS CO LTD0 citations49
US12382716B2Aug 5, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12471345B2Nov 11, 2025
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations46
US10883173B2Jan 5, 2021
Gas storage cylinder, deposition system, and method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations45