Inventor
HSIAO YI-HSUAN
TW34 patents
⚠️ This page may combine multiple inventors who share the name “HSIAO YI-HSUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS9520482B1Dec 13, 2016
Method of cutting metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD3,161 citations98
US11855085B2Dec 26, 2023
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11830926B2Nov 28, 2023
Semiconductor device structure with metal gate stacks
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11527443B2Dec 13, 2022
Residue-free metal gate cutting for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10867998B1Dec 15, 2020
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10461171B2Oct 29, 2019
Structure and formation method of semiconductor device with metal gate stacks
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10460994B2Oct 29, 2019
Residue-free metal gate cutting for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12363994B2Jul 15, 2025
Residue-free metal gate cutting for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310096B2May 20, 2025
Method for fabricating semiconductor structure with cutting depth control
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218130B2Feb 4, 2025
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166105B2Dec 10, 2024
Semiconductor device structure with metal gate stacks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11915980B2Feb 27, 2024
Residue-free metal gate cutting for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721588B2Aug 8, 2023
Semiconductor structure with cutting depth control and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444080B2Sep 13, 2022
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11201230B2Dec 14, 2021
Semiconductor device structure with metal gate stacks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031290B2Jun 8, 2021
Semiconductor structure with cutting depth control and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10943828B2Mar 9, 2021
Residue-free metal gate cutting for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10833077B2Nov 10, 2020
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
MACRONIX INT CO LTD
7 patentsUS9214351B2Dec 15, 2015
Memory architecture of thin film 3D array
MACRONIX INT CO LTD9 citations84
US8987914B2Mar 24, 2015
Conductor structure and method
MACRONIX INT CO LTD7 citations84
US9425191B2Aug 23, 2016
Memory device and manufacturing method of the same
MACRONIX INT CO LTD4 citations73
US9252156B2Feb 2, 2016
Conductor structure and method
MACRONIX INT CO LTD2 citations63
US9536611B2Jan 3, 2017
3D NAND memory using two separate SSL structures in an interlaced configuration for one bit line
MACRONIX INT CO LTD1 citations52
US9536893B2Jan 3, 2017
Three-dimensional memory and method for manufacturing the same
MACRONIX INT CO LTD0 citations52
US9087825B2Jul 21, 2015
Semiconductor structure and method for manufacturing the same
MACRONIX INT CO LTD0 citations52
LUE HANG-TING
5 patentsUS8759899B1Jun 24, 2014
Integration of 3D stacked IC device with peripheral circuits
LUE HANG-TING86 citations98
US8860124B2Oct 14, 2014
Depletion-mode charge-trapping flash device
LUE HANG-TING27 citations92
US8488387B2Jul 16, 2013
Thermally assisted dielectric charge trapping flash
LUE HANG-TING19 citations92
US8547741B2Oct 1, 2013
Nonvolatile stacked NAND memory
LUE HANG-TING2 citations63
US8609554B2Dec 17, 2013
Semiconductor structure and method for manufacturing the same
LUE HANG-TING0 citations52