Inventor

HUANG CHUNG-TING

TW15 patents

⚠️ This page may combine multiple inventors who share the name “HUANG CHUNG-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

14 patents

US11545560B2Jan 3, 2023

Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same

UNITED MICROELECTRONICS CORP2 citations72

US9373705B1Jun 21, 2016

Manufacturing method of a fin-shaped field effect transistor and a device thereof

UNITED MICROELECTRONICS CORP3 citations72

US12300743B2May 13, 2025

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations60

US12237415B2Feb 25, 2025

Method for fabricating semiconductor device

UNITED MICROELECTRONICS CORP0 citations60

US12021134B2Jun 25, 2024

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations60

US11769833B2Sep 26, 2023

Method for fabricating semiconductor device

UNITED MICROELECTRONICS CORP0 citations60

US11121254B2Sep 14, 2021

Transistor with strained superlattice as source/drain region

UNITED MICROELECTRONICS CORP1 citations59

US9899498B2Feb 20, 2018

Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same

UNITED MICROELECTRONICS CORP1 citations51

US9660086B2May 23, 2017

Fin-shaped field effect transistor

UNITED MICROELECTRONICS CORP0 citations51

US10644131B2May 5, 2020

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations47

US10388756B2Aug 20, 2019

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations47

INNODISK CORP

1 patent

US11922027B2Mar 5, 2024

Memory access speed adjustment method, control device and memory module

INNODISK CORP0 citations56