Inventor

KANG SHINHWAN

KR25 patents

⚠️ This page may combine multiple inventors who share the name “KANG SHINHWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG SHINHWAN

SAMSUNG ELECTRONICS CO LTD

Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate

Three-dimensional semiconductor memory device

Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate

Method of fabricating a three-dimensional semiconductor memory device having a plurality of memory blocks on a peripheral logic structure

Three-dimensional semiconductor device

Vertical memory devices

Three-dimensional semiconductor memory device

Semiconductor device and electronic system including the same

Three-dimensional semiconductor memory device including vertically stacked electrodes

Semiconductor device

Vertical memory devices

Semiconductor device

Vertical semiconductor devices

Vertical memory devices

Semiconductor memory devices

Semiconductor device

Vertical semiconductor devices

Semiconductor memory devices

Semiconductor device and electronic system

Semiconductor device and electronic system

Semiconductor devices including dummy patterns for discharging effects

Semiconductor devices and data storage systems including the same

Semiconductor devices and data storage systems including the same

Three-dimensional semiconductor memory devices, methods of fabricating the same, and electronic systems including the same

KANAMORI KOHJI

Semiconductor devices including charge storage patterns