Inventor
KIM HYUNGJUN
KR99 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYUNGJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS11358904B2Jun 14, 2022
Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11858829B2Jan 2, 2024
Ternary paraelectric material with space group Cc and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11562218B2Jan 24, 2023
Neural network accelerator
SAMSUNG ELECTRONICS CO LTD1 citations71
US12453265B2Oct 21, 2025
Display apparatus
SAMSUNG ELECTRONICS CO LTD0 citations62
US12446239B2Oct 14, 2025
Capacitor, method of fabricating the capacitor, and electronic device including the capacitor
SAMSUNG ELECTRONICS CO LTD0 citations62
US12308365B2May 20, 2025
Thin film structure including method of manufacturing
SAMSUNG ELECTRONICS CO LTD0 citations62
US12269753B2Apr 8, 2025
Ternary paraelectric material with space group Cc and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11824081B2Nov 21, 2023
Dielectric thin film, integrated device including the same, and method of manufacturing the dielectric thin film
SAMSUNG ELECTRONICS CO LTD0 citations62
US11791373B2Oct 17, 2023
Dielectric thin film, capacitor including the dielectric thin film, and method for manufacturing the dielectric thin film
SAMSUNG ELECTRONICS CO LTD0 citations62
US11681899B2Jun 20, 2023
Dividing neural networks
SAMSUNG ELECTRONICS CO LTD1 citations62
US11664414B2May 30, 2023
Single crystal material and method of forming the same and stacked structure and ceramic electronic component and device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11515363B2Nov 29, 2022
Display apparatus
SAMSUNG ELECTRONICS CO LTD0 citations62
US10998133B2May 4, 2021
Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10937857B2Mar 2, 2021
Single crystal material and method of forming the same and stacked structure and ceramic electronic component and device
SAMSUNG ELECTRONICS CO LTD0 citations62
US10043984B2Aug 7, 2018
Condensed cyclic compound and organic light-emitting device including the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US12501631B2Dec 16, 2025
Capacitor, and device comprising the same, and method of preparing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12307358B2May 20, 2025
Neural network accelerator
SAMSUNG ELECTRONICS CO LTD0 citations61
US12125524B2Oct 22, 2024
Electronic device for configuring neural network
SAMSUNG ELECTRONICS CO LTD0 citations61
US11954582B2Apr 9, 2024
Neural network accelerator
SAMSUNG ELECTRONICS CO LTD0 citations61
US11790985B2Oct 17, 2023
Electronic device for configuring neural network
SAMSUNG ELECTRONICS CO LTD0 citations61
US11755897B2Sep 12, 2023
Artificial neural network circuit
SAMSUNG ELECTRONICS CO LTD0 citations61
US11580368B2Feb 14, 2023
Artificial neural network circuit
SAMSUNG ELECTRONICS CO LTD0 citations61
IBM
10 patentsUS7023064B2Apr 4, 2006
Temperature stable metal nitride gate electrode
IBM32 citations93
US7098537B2Aug 29, 2006
Interconnect structure diffusion barrier with high nitrogen content
IBM17 citations92
US7211507B2May 1, 2007
PE-ALD of TaN diffusion barrier region on low-k materials
IBM15 citations84
US7186446B2Mar 6, 2007
Plasma enhanced ALD of tantalum nitride and bilayer
IBM13 citations84
US6943097B2Sep 13, 2005
Atomic layer deposition of metallic contacts, gates and diffusion barriers
IBM8 citations74
US6770500B2Aug 3, 2004
Process of passivating a metal-gated complementary metal oxide semiconductor
IBM10 citations73
US10831860B2Nov 10, 2020
Alignment techniques to match symmetry point as zero-weight point in analog crosspoint arrays
IBM3 citations72
US7998842B2Aug 16, 2011
Atomic layer deposition metallic contacts, gates and diffusion barriers
IBM2 citations63
US7378338B2May 27, 2008
Method of forming an interconnect structure diffusion barrier with high nitrogen content
IBM2 citations63
US7282403B2Oct 16, 2007
Temperature stable metal nitride gate electrode
IBM4 citations63
THINKWARE CORP
7 patentsUS10866110B2Dec 15, 2020
Navigation device, navigation system, and method of operating the same
THINKWARE CORP11 citations94
US11326894B2May 10, 2022
Navigation device, navigation system, and method of operating the same
THINKWARE CORP1 citations73
US12117306B2Oct 15, 2024
Navigation device, navigation system, and method of operating the same
THINKWARE CORP0 citations62
US11946763B2Apr 2, 2024
Navigation device, navigation system, and method of operating the same
THINKWARE CORP0 citations62
US11841237B2Dec 12, 2023
Navigation device, navigation system, and method of operating the same
THINKWARE CORP0 citations62
US11808596B2Nov 7, 2023
Navigation device, navigation system, and method of operating the same
THINKWARE CORP0 citations62
US11629970B2Apr 18, 2023
Navigation device, navigation system, and method of operating the same
THINKWARE CORP0 citations62
SAMSUNG DISPLAY CO LTD
2 patentsPOSTECH ACAD IND FOUND
2 patentsUS8377730B2Feb 19, 2013
Method of manufacturing vertically aligned nanotubes, method of manufacturing sensor structure, and sensor element manufactured thereby
POSTECH ACAD IND FOUND5 citations69
US11216728B2Jan 4, 2022
Weight matrix circuit and weight matrix input circuit
POSTECH ACAD IND FOUND0 citations63
ENTEGRIS INC
1 patentHYUNDAI MOTOR CO LTD
1 patentINDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIV
1 patentLG DISPLAY CO LTD
1 patentUNIV YONSEI IACF
1 patentPOSTECH RES & BUSINESS DEV FOUND
1 patentKIM HYUNGJUN
1 patentShowing the top 50 of 99 patents by PatentIndex Score.