P

Inventor

HSU WEI-CHENG

TW32 patents
⚠️ This page may combine multiple inventors who share the name “HSU WEI-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

19 patents
US10797091B2Oct 6, 2020

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9887234B2Feb 6, 2018

CMOS image sensor and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9627326B2Apr 18, 2017

Method for forming alignment marks and structure of same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12040336B2Jul 16, 2024

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11538837B2Dec 27, 2022

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11004880B2May 11, 2021

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10074612B2Sep 11, 2018

Method for forming alignment marks and structure of same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12057486B2Aug 6, 2024

Metal gate cap

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605720B2Mar 14, 2023

Metal gate cap

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10910420B2Feb 2, 2021

Semiconductor switching device separate by device isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12581764B2Mar 17, 2026

Bond structure having shielding structures for stacked IC chips

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12464789B2Nov 4, 2025

Semiconductor device structure and method for forming the semiconductor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12191336B2Jan 7, 2025

Image sensor having a gate dielectric structure for improved device scaling

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10734423B2Aug 4, 2020

Semiconductor switching device separated by device isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10468441B2Nov 5, 2019

Semiconductor switching device separated by device isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10141358B2Nov 27, 2018

Semiconductor switching device separated by device isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9704910B2Jul 11, 2017

Semiconductor switching device separated by device isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12414329B2Sep 9, 2025

Forming low-resistance capping layer over metal gate electrode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12094948B2Sep 17, 2024

Forming low-resistance capping layer over metal gate electrode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUCTOR MFG

4 patents

HTC CORP

3 patents

CAMBRIOS FILM SOLUTIONS CORP

2 patents

WANG TZU-JUI

1 patent

HSU WEI CHENG

1 patent

CE BIOTECHNOLOGY INC

1 patent

HSU WEI-CHENG

1 patent