Inventor
Chan Yung-Hsiang
TW14 patents
Patents
14 patentsUS10026838B2Jul 17, 2018
Fin-type field effect transistor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations80
US12317574B2May 27, 2025
Device providing multiple threshold voltages and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080604B2Sep 3, 2024
Gate-all-around semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009400B2Jun 11, 2024
Device providing multiple threshold voltages and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791214B2Oct 17, 2023
Gate-all-around semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302627B2May 13, 2025
Semiconductor device with non-conformal gate dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11908745B2Feb 20, 2024
Semiconductor device with non-conformal gate dieletric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605563B2Mar 14, 2023
Semiconductor device with non-conformal gate dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12154964B2Nov 26, 2024
Metal gates with layers for transistor threshold voltage tuning and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12464789B2Nov 4, 2025
Semiconductor device structure and method for forming the semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12426309B2Sep 23, 2025
Method of manufacturing semiconductor devices and semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55
US12593496B2Mar 31, 2026
Multiple threshold voltage implementation through lanthanum incorporation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11664279B2May 30, 2023
Multiple threshold voltage implementation through lanthanum incorporation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12142640B2Nov 12, 2024
Semiconductor structures with multiple threshold voltage offerings and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50