Inventor · disambiguated record
Alex J. Schrinsky
Also filed as: SCHRINSKY ALEX · SCHRINSKY ALEX J · SCHRINSKY ALEX JAMES
30 granted patents·3 pending applications·95 citations·filing 2004–2022
95Inventor score
Top patents by PatentIndex Score
33 records- 0197US11239242B2Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 1, 2022·5 cites·31 claims
- 0297US9754946B1Methods of forming an elevationally extending conductor laterally between a pair of conductive linesMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 5, 2017·30 cites·25 claims
- 0391US7491641B2Method of forming a conductive line and a method of forming a conductive contact adjacent to and insulated from a conductive lineMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 17, 2009·20 cites·27 claims
- 0481US10347643B1Methods of forming integrated assemblies having dielectric regions along conductive structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 9, 2019·2 cites·20 claims
- 0576US9330934B2Methods of forming patterns on substratesZHOU BAOSUO·Filed 2009·Granted May 3, 2016·5 cites·47 claims
- 0676US7262053B2Terraced film stackMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 28, 2007·5 cites·35 claims
- 0774US9613864B2Low capacitance interconnect structures and associated systems and methodsMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 4, 2017·3 cites·21 claims
- 0872US8802525B2Methods of forming charge storage structures including etching diffused regions to form recessesSCHRINSKY ALEX·Filed 2011·Granted Aug 12, 2014·3 cites·24 claims
- 0972US7898019B2Semiconductor constructions having multiple patterned masking layers over NAND gate stacksMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 1, 2011·3 cites·4 claims
- 1072US7476588B2Methods of forming NAND cell units with string gates of various widthsMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 13, 2009·3 cites·23 claims
- 1169US9082714B2Use of etch process post wordline definition to improve data retention in a flash memory deviceKOVAL RANDY J·Filed 2011·Granted Jul 14, 2015·3 cites·5 claims
- 1268US8367303B2Semiconductor device fabrication and dry develop process suitable for critical dimension tunability and profile controlMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 5, 2013·2 cites·29 claims
- 1368US7927964B2Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2008·Granted Apr 19, 2011·2 cites·9 claims
- 1467US9082721B2Structures comprising masks comprising carbonMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 14, 2015·1 cites·12 claims
- 1565US8309424B2Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructionsSCHRINSKY ALEX J·Filed 2011·Granted Nov 13, 2012·2 cites·15 claims
- 1663US10700073B2Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 30, 2020·0 cites·17 claims
- 1762US7595521B2Terraced film stackMICRON TECHNOLOGY INC·Filed 2008·Granted Sep 29, 2009·1 cites·20 claims
- 1862US7468533B2Terraced film stackMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 23, 2008·1 cites·21 claims
- 1956US9087737B2Methods of forming charge storage structures including etching diffused regions to form recessesMICRON TECHNOLOGY INC·Filed 2014·Granted Jul 21, 2015·0 cites·19 claims
- 2054US8696922B2Methods of plasma etching platinum-comprising materials, methods of processing semiconductor substrates in the fabrication of integrated circuitry, and methods of forming a plurality of memory cellsZHU HONGBIN·Filed 2009·Granted Apr 15, 2014·0 cites·31 claims
- 2153US9136331B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 15, 2015·0 cites·9 claims
- 2253US7473613B2Terraced film stackMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 6, 2009·0 cites·21 claims
- 2352US7118966B2Methods of forming conductive linesMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 10, 2006·4 cites·44 claims
- 2452US2024030006A1Erosion rate monitoring for wafer fabrication equipmentMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2551US10134741B2Methods of forming an elevationally extending conductor laterally between a pair of conductive linesMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 20, 2018·0 cites·21 claims
- 2650US9911653B2Low capacitance interconnect structures and associated systems and methodsMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 6, 2018·0 cites·21 claims
- 2749US11088147B2Apparatus with doped surfaces, and related methods with in situ dopingMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 10, 2021·0 cites·24 claims
- 2848US9679964B2Semiconductor constructions having peripheral regions with spaced apart mesasMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 13, 2017·0 cites·19 claims
- 2947US11139309B2Integrated circuitry, arrays of capacitors of integrated circuitry, and methods used in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 5, 2021·0 cites·33 claims
- 3047US8409457B2Methods of forming a photoresist-comprising pattern on a substrateZHANG ZISHU·Filed 2008·Granted Apr 2, 2013·0 cites·38 claims
- 3146US11877434B2Microelectronic devices having features with a fin portion of different sidewall slope than a lower portion, and related methods and electronic systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 16, 2024·0 cites·16 claims
- 3244US2015340611A1Method for a dry exhumation without oxidation of a cell and source lineSONY CORP·Filed 2014·Application pending·0 cites
- 3341US2020243537A1Formation of a trench using a polymerizing radical materialMICRON TECHNOLOGY INC·Filed 2019·Application pending·0 cites
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