Inventor
YANG CHAN-SYUN DAVID
US17 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHAN-SYUN DAVID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS9425310B2Aug 23, 2016
Methods for forming wrap around contact
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US9472414B2Oct 18, 2016
Self-aligned multiple spacer patterning process
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10283603B2May 7, 2019
Methods for forming wrap around contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12014954B2Jun 18, 2024
Method and equipment for forming gaps in a material layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11551966B2Jan 10, 2023
Method of forming semiconductor structure having layer with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244856B2Feb 8, 2022
Method and equipment for forming gaps in a material layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9935172B2Apr 3, 2018
Methods for forming wrap around contact
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11942367B2Mar 26, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10861745B2Dec 8, 2020
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US11205700B2Dec 21, 2021
Air gap spacer and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10755968B2Aug 25, 2020
Method of forming semiconductor structure having layer with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10157773B1Dec 18, 2018
Semiconductor structure having layer with re-entrant profile and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10790370B2Sep 29, 2020
Wrap around contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51