P

Inventor

YANG CHAN-SYUN DAVID

US17 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHAN-SYUN DAVID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

13 patents
US9425310B2Aug 23, 2016

Methods for forming wrap around contact

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US9472414B2Oct 18, 2016

Self-aligned multiple spacer patterning process

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10283603B2May 7, 2019

Methods for forming wrap around contact

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12014954B2Jun 18, 2024

Method and equipment for forming gaps in a material layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11551966B2Jan 10, 2023

Method of forming semiconductor structure having layer with re-entrant profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244856B2Feb 8, 2022

Method and equipment for forming gaps in a material layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9935172B2Apr 3, 2018

Methods for forming wrap around contact

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11942367B2Mar 26, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10861745B2Dec 8, 2020

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US11205700B2Dec 21, 2021

Air gap spacer and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10755968B2Aug 25, 2020

Method of forming semiconductor structure having layer with re-entrant profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10157773B1Dec 18, 2018

Semiconductor structure having layer with re-entrant profile and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10790370B2Sep 29, 2020

Wrap around contact

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

(unassigned)

2 patents

APPLIED MATERIALS INC

1 patent

LAM RES CORP

1 patent