Inventor
WISE RICHARD S
US55 patents
⚠️ This page may combine multiple inventors who share the name “WISE RICHARD S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
38 patentsUS7859013B2Dec 28, 2010
Metal oxide field effect transistor with a sharp halo
IBM100 citations98
US7476578B1Jan 13, 2009
Process for finFET spacer formation
IBM51 citations94
US6838347B1Jan 4, 2005
Method for reducing line edge roughness of oxide material using chemical oxide removal
IBM28 citations92
US6355567B1Mar 12, 2002
Retrograde openings in thin films
IBM42 citations92
US6345399B1Feb 12, 2002
Hard mask process to prevent surface roughness for selective dielectric etching
IBM20 citations92
US6342722B1Jan 29, 2002
Integrated circuit having air gaps between dielectric and conducting lines
IBM37 citations92
US6093281AJul 25, 2000
Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers
IBM19 citations92
US9530665B2Dec 27, 2016
Protective trench layer and gate spacer in finFET devices
IBM15 citations84
US9431395B2Aug 30, 2016
Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation
IBM7 citations84
US9412654B1Aug 9, 2016
Graphene sacrificial deposition layer on beol copper liner-seed for mitigating queue-time issues between liner and plating step
IBM9 citations84
US7498271B1Mar 3, 2009
Nitrogen based plasma process for metal gate MOS device
IBM10 citations84
US6686296B1Feb 3, 2004
Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing
IBM13 citations83
US7943457B2May 17, 2011
Dual metal and dual dielectric integration for metal high-k FETs
IBM13 citations82
US6903023B2Jun 7, 2005
In-situ plasma etch for TERA hard mask materials
IBM15 citations80
US9691900B2Jun 27, 2017
Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch
IBM3 citations73
US9577068B2Feb 21, 2017
Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation
IBM2 citations73
US9236447B2Jan 12, 2016
Asymmetric spacers
IBM3 citations73
US10325998B2Jun 18, 2019
High selectivity nitride removal process based on selective polymer deposition
IBM1 citations72
US10269924B2Apr 23, 2019
High selectivity nitride removal process based on selective polymer deposition
IBM1 citations72
US6228279B1May 8, 2001
High-density plasma, organic anti-reflective coating etch system compatible with sensitive photoresist materials
IBM9 citations71
US6953724B2Oct 11, 2005
Self-limited metal recess for deep trench metal fill
IBM11 citations66
US7384835B2Jun 10, 2008
Metal oxide field effect transistor with a sharp halo and a method of forming the transistor
IBM3 citations63
US7329602B2Feb 12, 2008
Wiring structure for integrated circuit with reduced intralevel capacitance
IBM6 citations63
US7186660B2Mar 6, 2007
Silicon precursors for deep trench silicon etch processes
IBM4 citations63
US9104113B2Aug 11, 2015
Amplification method for photoresist exposure in semiconductor chip manufacturing
IBM2 citations62
US6656375B1Dec 2, 2003
Selective nitride: oxide anisotropic etch process
IBM3 citations62
US9627533B2Apr 18, 2017
High selectivity nitride removal process based on selective polymer deposition
IBM1 citations61
US8030157B1Oct 4, 2011
Liner protection in deep trench etching
IBM4 citations61
US9709898B2Jul 18, 2017
Amplification method for photoresist exposure in semiconductor chip manufacturing
IBM1 citations52
US9680015B2Jun 13, 2017
Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch
IBM0 citations52
US9324793B2Apr 26, 2016
Method for controlling the profile of an etched metallic layer
IBM0 citations52
US9209036B2Dec 8, 2015
Method for controlling the profile of an etched metallic layer
IBM0 citations52
US9082625B2Jul 14, 2015
Patterning through imprinting
IBM1 citations52
US7820555B2Oct 26, 2010
Method of patterning multilayer metal gate structures for CMOS devices
IBM1 citations52
US7645356B2Jan 12, 2010
Method of processing wafers with resonant heating
IBM0 citations52
US10651286B2May 12, 2020
High selectivity nitride removal process based on selective polymer deposition
IBM0 citations51
US7256399B2Aug 14, 2007
Non-destructive in-situ elemental profiling
IBM0 citations51
US8771533B2Jul 8, 2014
Edge protection seal for bonded substrates
IBM0 citations50
LABONTE ANDRE P
2 patentsRAMACHANDRAN RAVIKUMAR
1 patentGLOBALFOUNDRIES INC
1 patentLI ZHENGWEN
1 patentENGEL BRETT H
1 patentYANG DAEWON
1 patentCHUDZIK MICHAEL P
1 patentFAROOQ MUKTA G
1 patentHICHRI HABIB
1 patentKHARE MUKESH V
1 patentGLOBALFOUNDRIES SG PTE LTD
1 patentShowing the top 50 of 55 patents by PatentIndex Score.