P

Inventor

WISE RICHARD S

US55 patents
⚠️ This page may combine multiple inventors who share the name “WISE RICHARD S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

38 patents
US7859013B2Dec 28, 2010

Metal oxide field effect transistor with a sharp halo

IBM100 citations98
US7476578B1Jan 13, 2009

Process for finFET spacer formation

IBM51 citations94
US6838347B1Jan 4, 2005

Method for reducing line edge roughness of oxide material using chemical oxide removal

IBM28 citations92
US6355567B1Mar 12, 2002

Retrograde openings in thin films

IBM42 citations92
US6345399B1Feb 12, 2002

Hard mask process to prevent surface roughness for selective dielectric etching

IBM20 citations92
US6342722B1Jan 29, 2002

Integrated circuit having air gaps between dielectric and conducting lines

IBM37 citations92
US6093281AJul 25, 2000

Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers

IBM19 citations92
US9530665B2Dec 27, 2016

Protective trench layer and gate spacer in finFET devices

IBM15 citations84
US9431395B2Aug 30, 2016

Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation

IBM7 citations84
US9412654B1Aug 9, 2016

Graphene sacrificial deposition layer on beol copper liner-seed for mitigating queue-time issues between liner and plating step

IBM9 citations84
US7498271B1Mar 3, 2009

Nitrogen based plasma process for metal gate MOS device

IBM10 citations84
US6686296B1Feb 3, 2004

Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing

IBM13 citations83
US7943457B2May 17, 2011

Dual metal and dual dielectric integration for metal high-k FETs

IBM13 citations82
US6903023B2Jun 7, 2005

In-situ plasma etch for TERA hard mask materials

IBM15 citations80
US9691900B2Jun 27, 2017

Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch

IBM3 citations73
US9577068B2Feb 21, 2017

Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation

IBM2 citations73
US9236447B2Jan 12, 2016

Asymmetric spacers

IBM3 citations73
US10325998B2Jun 18, 2019

High selectivity nitride removal process based on selective polymer deposition

IBM1 citations72
US10269924B2Apr 23, 2019

High selectivity nitride removal process based on selective polymer deposition

IBM1 citations72
US6228279B1May 8, 2001

High-density plasma, organic anti-reflective coating etch system compatible with sensitive photoresist materials

IBM9 citations71
US6953724B2Oct 11, 2005

Self-limited metal recess for deep trench metal fill

IBM11 citations66
US7384835B2Jun 10, 2008

Metal oxide field effect transistor with a sharp halo and a method of forming the transistor

IBM3 citations63
US7329602B2Feb 12, 2008

Wiring structure for integrated circuit with reduced intralevel capacitance

IBM6 citations63
US7186660B2Mar 6, 2007

Silicon precursors for deep trench silicon etch processes

IBM4 citations63
US9104113B2Aug 11, 2015

Amplification method for photoresist exposure in semiconductor chip manufacturing

IBM2 citations62
US6656375B1Dec 2, 2003

Selective nitride: oxide anisotropic etch process

IBM3 citations62
US9627533B2Apr 18, 2017

High selectivity nitride removal process based on selective polymer deposition

IBM1 citations61
US8030157B1Oct 4, 2011

Liner protection in deep trench etching

IBM4 citations61
US9709898B2Jul 18, 2017

Amplification method for photoresist exposure in semiconductor chip manufacturing

IBM1 citations52
US9680015B2Jun 13, 2017

Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch

IBM0 citations52
US9324793B2Apr 26, 2016

Method for controlling the profile of an etched metallic layer

IBM0 citations52
US9209036B2Dec 8, 2015

Method for controlling the profile of an etched metallic layer

IBM0 citations52
US9082625B2Jul 14, 2015

Patterning through imprinting

IBM1 citations52
US7820555B2Oct 26, 2010

Method of patterning multilayer metal gate structures for CMOS devices

IBM1 citations52
US7645356B2Jan 12, 2010

Method of processing wafers with resonant heating

IBM0 citations52
US10651286B2May 12, 2020

High selectivity nitride removal process based on selective polymer deposition

IBM0 citations51
US7256399B2Aug 14, 2007

Non-destructive in-situ elemental profiling

IBM0 citations51
US8771533B2Jul 8, 2014

Edge protection seal for bonded substrates

IBM0 citations50

LABONTE ANDRE P

2 patents

RAMACHANDRAN RAVIKUMAR

1 patent

GLOBALFOUNDRIES INC

1 patent

LI ZHENGWEN

1 patent

ENGEL BRETT H

1 patent

YANG DAEWON

1 patent

CHUDZIK MICHAEL P

1 patent

FAROOQ MUKTA G

1 patent

HICHRI HABIB

1 patent

KHARE MUKESH V

1 patent

GLOBALFOUNDRIES SG PTE LTD

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.