Inventor

ANDERSON DIRK N

US18 patents

⚠️ This page may combine multiple inventors who share the name “ANDERSON DIRK N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANDERSON DIRK N

TEXAS INSTRUMENTS INC

Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes

Method of manufacturing a minimum scaled transistor

Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing

Stable and low resistance metal/barrier/silicon stack structure and related process for manufacturing

CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes

Pre-pattern surface modification for low-k dielectrics using A H2 plasma

Edge stress reduction by noncoincident layers

Encapsulated low resistance gate structure and method for forming same

Process for making vertically-oriented interconnections for VLSI devices

Process for making contacts and interconnections using direct-reacted silicide

Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices

Edge stress reduction by noncoincident layers

Integrated circuit metallization with reduced electromigration

Integrated circuit metallization with reduced electromigration

Contacts for VLSI devices using direct-reacted silicide

Integrated circuit memory devices with high angle implant around top of trench to reduce gated diode leakage

Pre-pattern surface modification of low-k dielectrics

ANDERSON DIRK N

High angle implant around top of trench to reduce gated diode leakage