P

Inventor

RYU EUI-YOUL

KR14 patents

Patents

14 patents
US6803276B2Oct 12, 2004

Semiconductor device having a flash memory cell and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD79 citations98
US6784476B2Aug 31, 2004

Semiconductor device having a flash memory cell and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD42 citations92
US6524915B2Feb 25, 2003

Split-gate flash memory and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD25 citations92
US6724661B2Apr 20, 2004

Erasing method in non-volatile memory device

SAMSUNG ELECTRONICS CO LTD14 citations84
US6649471B2Nov 18, 2003

Method of planarizing non-volatile memory device

SAMSUNG ELECTRONICS CO LTD20 citations82
US6800525B2Oct 5, 2004

Method of manufacturing split gate flash memory device

SAMSUNG ELECTRONICS CO LTD10 citations71
US9696771B2Jul 4, 2017

Methods and systems for operating multi-core processors

SAMSUNG ELECTRONICS CO LTD4 citations67
US6683340B2Jan 27, 2004

Split gate flash memory

SAMSUNG ELECTRONICS CO LTD5 citations62
US6977200B2Dec 20, 2005

Method of manufacturing split-gate memory

SAMSUNG ELECTRONICS CO LTD3 citations61
US9043629B2May 26, 2015

Multi-cluster processing system and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7564092B2Jul 21, 2009

Flash memory device having a split gate

SAMSUNG ELECTRONICS CO LTD0 citations51
US7195933B2Mar 27, 2007

Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern

SAMSUNG ELECTRONICS CO LTD0 citations51
US7094646B2Aug 22, 2006

Flash memory device having a split gate and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US6924505B2Aug 2, 2005

Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern

SAMSUNG ELECTRONICS CO LTD0 citations51