Inventor
OHTSUKA KOJI
JP23 patents
⚠️ This page may combine multiple inventors who share the name “OHTSUKA KOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANKEN ELECTRIC CO LTD
21 patentsUS7323723B2Jan 29, 2008
Semiconductor light-emitting device using phosphors for performing wavelength conversion
SANKEN ELECTRIC CO LTD244 citations98
US6841989B2Jan 11, 2005
Hall-effect current detector
SANKEN ELECTRIC CO LTD84 citations98
US6812687B1Nov 2, 2004
Semiconductor current detector of improved noise immunity
SANKEN ELECTRIC CO LTD79 citations98
US6683448B1Jan 27, 2004
Large current detector having a hall-effect device
SANKEN ELECTRIC CO LTD109 citations98
US6462531B1Oct 8, 2002
Current detector having a hall-effect device
SANKEN ELECTRIC CO LTD107 citations98
US6424018B1Jul 23, 2002
Semiconductor device having a hall-effect element
SANKEN ELECTRIC CO LTD115 citations98
US6759841B2Jul 6, 2004
Hall-effect current detector
SANKEN ELECTRIC CO LTD83 citations97
US6791313B2Sep 14, 2004
Electrical current detector having a U-shaped current path and hall-effect device
SANKEN ELECTRIC CO LTD65 citations96
US6545457B2Apr 8, 2003
Current detector utilizing hall effect
SANKEN ELECTRIC CO LTD98 citations95
US7176480B2Feb 13, 2007
Light-emitting semiconductor device having a quantum well active layer, and method of fabrication
SANKEN ELECTRIC CO LTD26 citations90
US5814838ASep 29, 1998
Light emitting semiconductor element with ZN doping
SANKEN ELECTRIC CO LTD19 citations90
US5027166AJun 25, 1991
High voltage, high speed Schottky semiconductor device and method of fabrication
SANKEN ELECTRIC CO LTD35 citations89
US5158909AOct 27, 1992
Method of fabricating a high voltage, high speed Schottky semiconductor device
SANKEN ELECTRIC CO LTD14 citations78
US6890791B2May 10, 2005
Compound semiconductor substrates and method of fabrication
SANKEN ELECTRIC CO LTD10 citations74
US5112774AMay 12, 1992
Method of fabricating a high-voltage semiconductor device having a rectifying barrier
SANKEN ELECTRIC CO LTD15 citations74
US5081510AJan 14, 1992
High-voltage semiconductor device having a rectifying barrier, and method of fabrication
SANKEN ELECTRIC CO LTD14 citations74
US5075740ADec 24, 1991
High speed, high voltage schottky semiconductor device
SANKEN ELECTRIC CO LTD13 citations74
US5006483AApr 9, 1991
Fabrication of P-N junction semiconductor device
SANKEN ELECTRIC CO LTD6 citations74
US4980749ADec 25, 1990
P-N junction semiconductor device and method of fabrication
SANKEN ELECTRIC CO LTD6 citations74
US5148240ASep 15, 1992
High voltage, high speed schottky semiconductor device and method of fabrication
SANKEN ELECTRIC CO LTD10 citations70
US5221638AJun 22, 1993
Method of manufacturing a Schottky barrier semiconductor device
SANKEN ELECTRIC CO LTD15 citations64