P

Inventor

TAKEI TETSUYA

JP44 patents
⚠️ This page may combine multiple inventors who share the name “TAKEI TETSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CANON KK

38 patents
US5514217AMay 7, 1996

Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof

CANON KK122 citations98
US5714010AFeb 3, 1998

Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same

CANON KK80 citations96
US5527391AJun 18, 1996

Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method

CANON KK72 citations96
US5520740AMay 28, 1996

Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same

CANON KK89 citations96
US5114770AMay 19, 1992

Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method

CANON KK61 citations96
US5510151AApr 23, 1996

Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space

CANON KK42 citations93
US5232507AAug 3, 1993

Apparatus for forming deposited films with microwave plasma CVD method

CANON KK27 citations93
US5130170AJul 14, 1992

Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation

CANON KK41 citations93
US4840139AJun 20, 1989

Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process

CANON KK53 citations93
US5514506AMay 7, 1996

Light receiving member having a multi-layered light receiving layer with an enhanced concentration of hydrogen or/and halogen atoms in the vicinity of the interface of adjacent layers

CANON KK21 citations92
US5443645AAug 22, 1995

Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure

CANON KK50 citations92
US5439715AAug 8, 1995

Process and apparatus for microwave plasma chemical vapor deposition

CANON KK27 citations92
US5284730AFeb 8, 1994

Electrophotographic light-receiving member

CANON KK28 citations92
US5129359AJul 14, 1992

Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate

CANON KK25 citations92
US5030476AJul 9, 1991

Process and apparatus for the formation of a functional deposited film on a cylindrical substrate by means of microwave plasma chemical vapor deposition

CANON KK35 citations92
US4953498ASep 4, 1990

Microwave plasma CVD apparatus having substrate shielding member

CANON KK27 citations92
US4674865AJun 23, 1987

Cleaning device

CANON KK42 citations92
US5597623AJan 28, 1997

Process for using microwave plasma CVD

CANON KK16 citations82
US5314780AMay 24, 1994

Method for treating metal substrate for electro-photographic photosensitive member and method for manufacturing electrophotographic photosensitive member

CANON KK19 citations82
US5061511AOct 29, 1991

Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method

CANON KK20 citations82
US4957772ASep 18, 1990

Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method

CANON KK20 citations82
US4897281AJan 30, 1990

Process for the formation of a functional deposited film by way of microwave plasma CVD method

CANON KK21 citations82
US5670286ASep 23, 1997

Electrophotographic light receiving member having an outermost surface with a specific metal element-bearing region and a region substantially free of said metal element which are two-dimensionally distributed

CANON KK14 citations74
US5624776AApr 29, 1997

Electrophotographic photosensitive member provided with a light receiving layer composed of a non-single crystal silicon material containing columnar structure regions and process for the production thereof

CANON KK10 citations74
US5582648ADec 10, 1996

Apparatus for preparing a functional deposited film by microwave plasma chemical vapor deposition

CANON KK10 citations74
US5480627AJan 2, 1996

Method for treating substrate for electrophotographic photosensitive member and method for making electrophotographic photosensitive member

CANON KK12 citations74
US5433790AJul 18, 1995

Deposit film forming apparatus with microwave CVD method

CANON KK14 citations74
US5360484ANov 1, 1994

Microwave plasma CVD apparatus provided with a microwave transmissive window made of specific ceramics for the formation of a functional deposited film

CANON KK8 citations74
US5338580AAug 16, 1994

Method of preparation of functional deposited film by microwave plasma chemical vapor deposition

CANON KK15 citations74
US4845001AJul 4, 1989

Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride

CANON KK10 citations74
US4795691AJan 3, 1989

Layered amorphous silicon photoconductor with surface layer having specific refractive index properties

CANON KK19 citations74
US5480754AJan 2, 1996

Electrophotographic photosensitive member and method of manufacturing the same

CANON KK12 citations73
US4930442AJun 5, 1990

Microwave plasma CVD apparatus having an improved microwave transmissive window

CANON KK16 citations73
US4897284AJan 30, 1990

Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method

CANON KK20 citations73
US5273851ADec 28, 1993

Electrophotographic light-receiving member having surface region with high ratio of Si bonded to C

CANON KK10 citations72
US4904556AFeb 27, 1990

Electrophotographic process using light receiving member with buffer layer containing silicon and aluminum atoms on aluminum substrate

CANON KK7 citations71
US4786573ANov 22, 1988

Layered light receiving member for electrophotography comprising buffer layer

CANON KK9 citations71
US5656404AAug 12, 1997

Light receiving member with an amorphous silicon photoconductive layer containing fluorine atoms in an amount of 1 to 95 atomic ppm

CANON KK4 citations63

FUJITSU LTD

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HITACHI DISPLAYS LTD

1 patent