P

Inventor

SHIRAI SHIGERU

JP79 patents
⚠️ This page may combine multiple inventors who share the name “SHIRAI SHIGERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CANON KK

38 patents
US4460670AJul 17, 1984

Photoconductive member with α-Si and C, N or O and dopant

CANON KK99 citations96
US5591492AJan 7, 1997

Process for forming and etching a film to effect specific crystal growth from activated species

CANON KK27 citations93
US4992839AFeb 12, 1991

Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same

CANON KK22 citations93
US4788120ANov 29, 1988

Light receiving member for use in electrophotography having an amorphous silicon layer

CANON KK27 citations93
US4465750AAug 14, 1984

Photoconductive member with a -Si having two layer regions

CANON KK40 citations93
US4460669AJul 17, 1984

Photoconductive member with α-Si and C, U or D and dopant

CANON KK46 citations93
US4414319ANov 8, 1983

Photoconductive member having amorphous layer containing oxygen

CANON KK33 citations93
US4409308AOct 11, 1983

Photoconductive member with two amorphous silicon layers

CANON KK36 citations93
US4394426AJul 19, 1983

Photoconductive member with α-Si(N) barrier layer

CANON KK40 citations93
US4394425AJul 19, 1983

Photoconductive member with α-Si(C) barrier layer

CANON KK50 citations93
US4359514ANov 16, 1982

Photoconductive member having barrier and depletion layers

CANON KK40 citations93
US5582944ADec 10, 1996

Light receiving member

CANON KK37 citations92
US5443645AAug 22, 1995

Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure

CANON KK50 citations92
US5284730AFeb 8, 1994

Electrophotographic light-receiving member

CANON KK28 citations92
US4918028AApr 17, 1990

Process for photo-assisted epitaxial growth using remote plasma with in-situ etching

CANON KK21 citations82
US4557987ADec 10, 1985

Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers

CANON KK24 citations82
US4539283ASep 3, 1985

Amorphous silicon photoconductive member

CANON KK16 citations82
US4490453ADec 25, 1984

Photoconductive member of a-silicon with nitrogen

CANON KK22 citations82
US4483911ANov 20, 1984

Photoconductive member with amorphous silicon-carbon surface layer

CANON KK20 citations82
US4461820AJul 24, 1984

Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate

CANON KK19 citations82
US4452874AJun 5, 1984

Photoconductive member with multiple amorphous Si layers

CANON KK21 citations82
US4452875AJun 5, 1984

Amorphous photoconductive member with α-Si interlayers

CANON KK26 citations82
US4443529AApr 17, 1984

Photoconductive member having an amorphous silicon photoconductor and a double-layer barrier layer

CANON KK24 citations82
US4403026ASep 6, 1983

Photoconductive member having an electrically insulating oxide layer

CANON KK27 citations82
US4359512ANov 16, 1982

Layered photoconductive member having barrier of silicon and halogen

CANON KK21 citations82
US5582947ADec 10, 1996

Glow discharge process for making photoconductive member

CANON KK13 citations74
US5258250ANov 2, 1993

Photoconductive member

CANON KK15 citations74
US5141836AAug 25, 1992

Method of forming a photoconductive member with silicon, hydrogen and/or halogen and carbon

CANON KK5 citations74
US4940642AJul 10, 1990

Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer

CANON KK7 citations74
US4818651AApr 4, 1989

Light receiving member with first layer of A-SiGe(O,N)(H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller

CANON KK4 citations74
US4795688AJan 3, 1989

Layered photoconductive member comprising amorphous silicon

CANON KK9 citations74
US4786574ANov 22, 1988

Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap

CANON KK13 citations74
US4775606AOct 4, 1988

Light receiving member comprising amorphous silicon layers for electrophotography

CANON KK12 citations74
US4536459AAug 20, 1985

Photoconductive member having multiple amorphous layers

CANON KK12 citations74
US4529679AJul 16, 1985

Photoconductive member

CANON KK18 citations74
US4525442AJun 25, 1985

Photoconductive member containing an amorphous boron layer

CANON KK9 citations74
US4522905AJun 11, 1985

Amorphous silicon photoconductive member with interface and rectifying layers

CANON KK12 citations74
US4501807AFeb 26, 1985

Photoconductive member having an amorphous silicon layer

CANON KK9 citations74

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

7 patents

PANASONIC CORP

2 patents

SHIRAI SHIGERU

1 patent

NISHIMURA MAKOTO

1 patent

TOSHIBA KK

1 patent

Showing the top 50 of 79 patents by PatentIndex Score.