Inventor
SHIRAI SHIGERU
JP79 patents
⚠️ This page may combine multiple inventors who share the name “SHIRAI SHIGERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
38 patentsUS4460670AJul 17, 1984
Photoconductive member with α-Si and C, N or O and dopant
CANON KK99 citations96
US5591492AJan 7, 1997
Process for forming and etching a film to effect specific crystal growth from activated species
CANON KK27 citations93
US4992839AFeb 12, 1991
Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same
CANON KK22 citations93
US4788120ANov 29, 1988
Light receiving member for use in electrophotography having an amorphous silicon layer
CANON KK27 citations93
US4465750AAug 14, 1984
Photoconductive member with a -Si having two layer regions
CANON KK40 citations93
US4460669AJul 17, 1984
Photoconductive member with α-Si and C, U or D and dopant
CANON KK46 citations93
US4414319ANov 8, 1983
Photoconductive member having amorphous layer containing oxygen
CANON KK33 citations93
US4409308AOct 11, 1983
Photoconductive member with two amorphous silicon layers
CANON KK36 citations93
US4394426AJul 19, 1983
Photoconductive member with α-Si(N) barrier layer
CANON KK40 citations93
US4394425AJul 19, 1983
Photoconductive member with α-Si(C) barrier layer
CANON KK50 citations93
US4359514ANov 16, 1982
Photoconductive member having barrier and depletion layers
CANON KK40 citations93
US5582944ADec 10, 1996
Light receiving member
CANON KK37 citations92
US5443645AAug 22, 1995
Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure
CANON KK50 citations92
US5284730AFeb 8, 1994
Electrophotographic light-receiving member
CANON KK28 citations92
US4918028AApr 17, 1990
Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
CANON KK21 citations82
US4557987ADec 10, 1985
Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers
CANON KK24 citations82
US4539283ASep 3, 1985
Amorphous silicon photoconductive member
CANON KK16 citations82
US4490453ADec 25, 1984
Photoconductive member of a-silicon with nitrogen
CANON KK22 citations82
US4483911ANov 20, 1984
Photoconductive member with amorphous silicon-carbon surface layer
CANON KK20 citations82
US4461820AJul 24, 1984
Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
CANON KK19 citations82
US4452874AJun 5, 1984
Photoconductive member with multiple amorphous Si layers
CANON KK21 citations82
US4452875AJun 5, 1984
Amorphous photoconductive member with α-Si interlayers
CANON KK26 citations82
US4443529AApr 17, 1984
Photoconductive member having an amorphous silicon photoconductor and a double-layer barrier layer
CANON KK24 citations82
US4403026ASep 6, 1983
Photoconductive member having an electrically insulating oxide layer
CANON KK27 citations82
US4359512ANov 16, 1982
Layered photoconductive member having barrier of silicon and halogen
CANON KK21 citations82
US5582947ADec 10, 1996
Glow discharge process for making photoconductive member
CANON KK13 citations74
US5258250ANov 2, 1993
Photoconductive member
CANON KK15 citations74
US5141836AAug 25, 1992
Method of forming a photoconductive member with silicon, hydrogen and/or halogen and carbon
CANON KK5 citations74
US4940642AJul 10, 1990
Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer
CANON KK7 citations74
US4818651AApr 4, 1989
Light receiving member with first layer of A-SiGe(O,N)(H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller
CANON KK4 citations74
US4795688AJan 3, 1989
Layered photoconductive member comprising amorphous silicon
CANON KK9 citations74
US4786574ANov 22, 1988
Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap
CANON KK13 citations74
US4775606AOct 4, 1988
Light receiving member comprising amorphous silicon layers for electrophotography
CANON KK12 citations74
US4536459AAug 20, 1985
Photoconductive member having multiple amorphous layers
CANON KK12 citations74
US4529679AJul 16, 1985
Photoconductive member
CANON KK18 citations74
US4525442AJun 25, 1985
Photoconductive member containing an amorphous boron layer
CANON KK9 citations74
US4522905AJun 11, 1985
Amorphous silicon photoconductive member with interface and rectifying layers
CANON KK12 citations74
US4501807AFeb 26, 1985
Photoconductive member having an amorphous silicon layer
CANON KK9 citations74
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
7 patentsUS7372002B2May 13, 2008
Fluid heating device and cleaning device using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD68 citations97
US5970528AOct 26, 1999
Warm-water washing device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD35 citations93
US7191473B2Mar 20, 2007
Sanitary washing apparatus
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD47 citations91
US6920654B2Jul 26, 2005
Water shower apparatus
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations89
US6195814B1Mar 6, 2001
Shower bath apparatus and spray nozzle
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD31 citations89
US4738283AApr 19, 1988
Gas flow controller
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations82
US4170339AOct 9, 1979
Analog displacement type electromagnetic valve
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations82
PANASONIC CORP
2 patentsSHIRAI SHIGERU
1 patentNISHIMURA MAKOTO
1 patentTOSHIBA KK
1 patentShowing the top 50 of 79 patents by PatentIndex Score.