Inventor
YIN JINSONG
US14 patents
⚠️ This page may combine multiple inventors who share the name “YIN JINSONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
10 patentsUS6830998B1Dec 14, 2004
Gate dielectric quality for replacement metal gate transistors
ADVANCED MICRO DEVICES INC75 citations98
US6727560B1Apr 27, 2004
Engineered metal gate electrode
ADVANCED MICRO DEVICES INC64 citations96
US7071086B2Jul 4, 2006
Method of forming a metal gate structure with tuning of work function by silicon incorporation
ADVANCED MICRO DEVICES INC32 citations92
US7060571B1Jun 13, 2006
Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric
ADVANCED MICRO DEVICES INC35 citations92
US7033888B2Apr 25, 2006
Engineered metal gate electrode
ADVANCED MICRO DEVICES INC33 citations92
US6861350B1Mar 1, 2005
Method of manufacturing semiconductor device comprising silicon-rich tasin metal gate electrode
ADVANCED MICRO DEVICES INC32 citations92
US6893910B1May 17, 2005
One step deposition method for high-k dielectric and metal gate electrode
ADVANCED MICRO DEVICES INC15 citations84
US6927162B1Aug 9, 2005
Method of forming a contact in a semiconductor device with formation of silicide prior to plasma treatment
ADVANCED MICRO DEVICES INC7 citations72
US7217660B1May 15, 2007
Method for manufacturing a semiconductor component that inhibits formation of wormholes
ADVANCED MICRO DEVICES INC2 citations62
US7476604B1Jan 13, 2009
Aggressive cleaning process for semiconductor device contact formation
ADVANCED MICRO DEVICES INC3 citations59
SPANSION LLC
3 patentsUS8039391B1Oct 18, 2011
Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layer
SPANSION LLC23 citations91
US7335594B1Feb 26, 2008
Method for manufacturing a memory device having a nanocrystal charge storage region
SPANSION LLC13 citations82
US7407882B1Aug 5, 2008
Semiconductor component having a contact structure and method of manufacture
SPANSION LLC3 citations62