Inventor
HOSOI NOBUYUKI
JP17 patents
⚠️ This page may combine multiple inventors who share the name “HOSOI NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
8 patentsUS6114020ASep 5, 2000
Recording medium and ink-jet recording process using the recording medium
CANON KK53 citations95
US6670000B1Dec 30, 2003
Recording medium, ink-jet recording therewith, and process for production thereof
CANON KK22 citations92
US6200670B1Mar 13, 2001
Recording medium and recording method for using the same
CANON KK18 citations82
US6783229B1Aug 31, 2004
Recording medium, image forming process using the same, and process for the preparation of the same
CANON KK11 citations74
US6830790B1Dec 14, 2004
Recording medium, manufacturing process thereof and image forming method using the medium
CANON KK12 citations73
US4923766AMay 8, 1990
Process for preparing magnetic recording
CANON KK16 citations71
US4999217AMar 12, 1991
Process for producing magnetic recording medium
CANON KK6 citations63
US6649234B1Nov 18, 2003
Fine powder material for forming in-receiving layer, manufacturing method thereof, recording medium making use of the fine powder material and image forming method using the recording medium
CANON KK0 citations51
MITSUBISHI CHEM CORP
8 patentsUS6387721B1May 14, 2002
Semiconductor light-emitting device and manufacturing method for the same
MITSUBISHI CHEM CORP34 citations91
US6278137B1Aug 21, 2001
Semiconductor light-emitting devices
MITSUBISHI CHEM CORP36 citations91
US5811839ASep 22, 1998
Semiconductor light-emitting devices
MITSUBISHI CHEM CORP22 citations91
US5619518AApr 8, 1997
Semiconductor laser diode
MITSUBISHI CHEM CORP32 citations90
US6807213B1Oct 19, 2004
Semiconductor optical device apparatus
MITSUBISHI CHEM CORP29 citations89
US6707071B2Mar 16, 2004
Semiconductor light-emitting device
MITSUBISHI CHEM CORP14 citations82
US5566198AOct 15, 1996
Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
MITSUBISHI CHEM CORP13 citations73
US5606180AFeb 25, 1997
III-V compound semiconductor with high crystal quality and luminous efficiency
MITSUBISHI CHEM CORP2 citations63