Inventor
FUKUMA KAZUTO
JP3 patents
Patents
3 patentsUS5314845AMay 24, 1994
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
APPLIED MATERIALS INC122 citations97
US5354387AOct 11, 1994
Boron phosphorus silicate glass composite layer on semiconductor wafer
APPLIED MATERIALS INC44 citations95
US5166101ANov 24, 1992
Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
APPLIED MATERIALS INC73 citations95