Inventor
NALLAN PADMAPANI C
US18 patents
⚠️ This page may combine multiple inventors who share the name “NALLAN PADMAPANI C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
11 patentsUS6642127B2Nov 4, 2003
Method for dicing a semiconductor wafer
APPLIED MATERIALS INC274 citations98
US7320942B2Jan 22, 2008
Method for removal of metallic residue after plasma etching of a metal layer
APPLIED MATERIALS INC19 citations92
US6984585B2Jan 10, 2006
Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer
APPLIED MATERIALS INC36 citations92
US6942813B2Sep 13, 2005
Method of etching magnetic and ferroelectric materials using a pulsed bias source
APPLIED MATERIALS INC21 citations92
US6902681B2Jun 7, 2005
Method for plasma etching of high-K dielectric materials
APPLIED MATERIALS INC18 citations92
US6893893B2May 17, 2005
Method of preventing short circuits in magnetic film stacks
APPLIED MATERIALS INC37 citations92
US7105361B2Sep 12, 2006
Method of etching a magnetic material
APPLIED MATERIALS INC14 citations84
US6943039B2Sep 13, 2005
Method of etching ferroelectric layers
APPLIED MATERIALS INC9 citations74
US7217665B2May 15, 2007
Method of plasma etching high-K dielectric materials with high selectivity to underlying layers
APPLIED MATERIALS INC8 citations73
US6638874B2Oct 28, 2003
Methods used in fabricating gates in integrated circuit device structures
APPLIED MATERIALS INC7 citations71
US6415198B1Jul 2, 2002
Plasma etching of silicon using a chlorine chemistry augmented with sulfur dioxide
APPLIED MATERIALS INC5 citations63
(unassigned)
6 patentsUS6759263B2Jul 6, 2004
Method of patterning a layer of magnetic material
109 citations97
US6855643B2Feb 15, 2005
Method for fabricating a gate structure
27 citations92
US6806095B2Oct 19, 2004
Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
19 citations92
US6767824B2Jul 27, 2004
Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask
34 citations92
US6759286B2Jul 6, 2004
Method of fabricating a gate structure of a field effect transistor using a hard mask
20 citations92
US6759340B2Jul 6, 2004
Method of etching a trench in a silicon-on-insulator (SOI) structure
45 citations91