Inventor
TOMITA KAZUYOSHI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “TOMITA KAZUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
8 patentsUS7052979B2May 30, 2006
Production method for semiconductor crystal and semiconductor luminous element
TOYODA GOSEI KK56 citations96
US6649943B2Nov 18, 2003
Group III nitride compound semiconductor light-emitting element
TOYODA GOSEI KK33 citations92
US5889806AMar 30, 1999
Group III nitride compound semiconductor laser diodes
TOYODA GOSEI KK39 citations92
US7011707B2Mar 14, 2006
Production method for semiconductor substrate and semiconductor element
TOYODA GOSEI KK11 citations82
US6844246B2Jan 18, 2005
Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
TOYODA GOSEI KK10 citations73
US6964705B2Nov 15, 2005
Method for producing semiconductor crystal
TOYODA GOSEI KK6 citations63
US6716655B2Apr 6, 2004
Group III nitride compound semiconductor element and method for producing the same
TOYODA GOSEI KK3 citations63
US7342364B2Mar 11, 2008
Light source
TOYODA GOSEI KK0 citations52
TOYOTA CHUO KENKYUSHO KK
5 patentsUS7646036B2Jan 12, 2010
Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrode
TOYOTA CHUO KENKYUSHO KK30 citations92
US7163876B2Jan 16, 2007
Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device
TOYOTA CHUO KENKYUSHO KK15 citations84
US10763333B2Sep 1, 2020
Nitride semiconductor device and method of manufacturing nitride semiconductor device
TOYOTA CHUO KENKYUSHO KK2 citations70
US9536996B2Jan 3, 2017
Apparatus and method of manufacturing a support layer
TOYOTA CHUO KENKYUSHO KK0 citations51
US9728609B2Aug 8, 2017
Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer
TOYOTA CHUO KENKYUSHO KK0 citations40