Inventor
PARK IN-SEON
KR9 patents
Patents
9 patentsUS6144060ANov 7, 2000
Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature
SAMSUNG ELECTRONICS CO LTD457 citations99
US6335240B1Jan 1, 2002
Capacitor for a semiconductor device and method for forming the same
SAMSUNG ELECTRONICS CO LTD468 citations98
US6489214B2Dec 3, 2002
Method for forming a capacitor of a semiconductor device
SAMSUNG ELECTRONICS CO LTD56 citations96
US5656337AAug 12, 1997
Method of forming a dielectric layer
SAMSUNG ELECTRONICS CO LTD54 citations94
US6046927AApr 4, 2000
Nonvolatile semiconductor memory device, a method of fabricating the same, and read, erase write methods of the same
SAMSUNG ELECTRONICS CO LTD12 citations73
US5814556ASep 29, 1998
Method of filling a contact hole in a semiconductor substrate with a metal
SAMSUNG ELECTRONICS CO LTD15 citations73
US5560778AOct 1, 1996
Apparatus for forming a dielectric layer
SAMSUNG ELECTRONICS CO LTD5 citations72
US6077772AJun 20, 2000
Methods of forming metal interconnections including thermally treated barrier layers
SAMSUNG ELECTRONICS CO LTD12 citations68
US5096847AMar 17, 1992
Method making an ultra high density dram cell with stacked capacitor
SAMSUNG ELECTRONICS CO LTD3 citations62