Inventor
HWANG HYUN SANG
KR28 patents
⚠️ This page may combine multiple inventors who share the name “HWANG HYUN SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS8009454B2Aug 30, 2011
Resistance random access memory device and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD67 citations98
US7456468B2Nov 25, 2008
Semiconductor device including high-k insulating layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US7420256B2Sep 2, 2008
Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US9633727B2Apr 25, 2017
Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications
SAMSUNG ELECTRONICS CO LTD0 citations52
US8902632B2Dec 2, 2014
Hybrid resistive memory devices and methods of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7670916B2Mar 2, 2010
Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7531865B2May 12, 2009
Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7358137B2Apr 15, 2008
Memory devices including barrier layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
LG SEMICON CO LTD
5 patentsUS5696012ADec 9, 1997
Fabrication method of semiconductor memory device containing CMOS transistors
LG SEMICON CO LTD65 citations96
US5684317ANov 4, 1997
MOS transistor and method of manufacturing thereof
LG SEMICON CO LTD51 citations96
US6087237AJul 11, 2000
Method of manufacturing a MOSFET by forming a single oxide layer doping with either an oxide accelerator or an oxide inhibitor producing asymmetric thickness
LG SEMICON CO LTD27 citations92
US6077736AJun 20, 2000
Method of fabricating a semiconductor device
LG SEMICON CO LTD21 citations92
US5793080AAug 11, 1998
Nonvolatile memory device
LG SEMICON CO LTD19 citations84
HWANG HYUN-SANG
3 patentsUS9117513B2Aug 25, 2015
Resistive RAM, method for fabricating the same, and method for driving the same
HWANG HYUN-SANG10 citations81
US8546861B2Oct 1, 2013
Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor
HWANG HYUN-SANG6 citations72
US9231198B2Jan 5, 2016
Resistance-variable memory device including carbide-based solid electrolyte membrane and manufacturing method thereof
HWANG HYUN-SANG3 citations69
KWANGJU INST SCI & TECH
2 patentsUS6913961B2Jul 5, 2005
Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere
KWANGJU INST SCI & TECH51 citations96
US6797645B2Sep 28, 2004
Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantation
KWANGJU INST SCI & TECH3 citations63
HYUNDAI MOTOR CO LTD
2 patentsSK HYNIX INC
2 patentsPOSTECH RES & BUSINESS DEV FOUND
2 patentsUS12250890B2Mar 11, 2025
Two-terminal atom-based switching device and manufacturing method thereof
POSTECH RES & BUSINESS DEV FOUND0 citations56
US11962321B2Apr 16, 2024
Analog-stochastic converter for converting analog signal into probability signal based on threshold switching element
POSTECH RES & BUSINESS DEV FOUND0 citations52