Inventor
DROWLEY CLIFFORD I
US23 patents
⚠️ This page may combine multiple inventors who share the name “DROWLEY CLIFFORD I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
7 patentsUS6023081AFeb 8, 2000
Semiconductor image sensor
MOTOROLA INC146 citations96
US6100556AAug 8, 2000
Method of forming a semiconductor image sensor and structure
MOTOROLA INC42 citations92
US5232547AAug 3, 1993
Simultaneously measuring thickness and composition of a film
MOTOROLA INC35 citations91
US6221686B1Apr 24, 2001
Method of making a semiconductor image sensor
MOTOROLA INC26 citations90
US6541794B1Apr 1, 2003
Imaging device and method
MOTOROLA INC12 citations72
US6476426B1Nov 5, 2002
Electronic component and method for improving pixel charge transfer in the electronic component
MOTOROLA INC0 citations50
US5312764AMay 17, 1994
Method of doping a semiconductor substrate
MOTOROLA INC1 citations48
HEWLETT PACKARD CO
6 patentsUS4545823AOct 8, 1985
Grain boundary confinement in silicon-on-insulator films
HEWLETT PACKARD CO62 citations96
US4507158AMar 26, 1985
Trench isolated transistors in semiconductor films
HEWLETT PACKARD CO88 citations96
US5144403ASep 1, 1992
Bipolar transistor with trench-isolated emitter
HEWLETT PACKARD CO30 citations91
US5008210AApr 16, 1991
Process of making a bipolar transistor with a trench-isolated emitter
HEWLETT PACKARD CO24 citations91
US5310711AMay 10, 1994
Method of forming doped shallow electrical junctions
HEWLETT PACKARD CO9 citations74
US5256162AOct 26, 1993
Apparatus for forming shallow electrical junctions
HEWLETT PACKARD CO12 citations74
CYPRESS SEMICONDUCTOR CORP
5 patentsUS7312484B1Dec 25, 2007
Pixel having an oxide layer with step region
CYPRESS SEMICONDUCTOR CORP14 citations92
US7427742B2Sep 23, 2008
Microlens for use with a solid-state image sensor and a non-telecentric taking lens
CYPRESS SEMICONDUCTOR CORP21 citations88
US7180111B1Feb 20, 2007
Gate n-well/p-substrate photodiode
CYPRESS SEMICONDUCTOR CORP2 citations63
US7173299B1Feb 6, 2007
Photodiode having extended well region
CYPRESS SEMICONDUCTOR CORP2 citations63
US7368770B1May 6, 2008
Well region with rounded corners
CYPRESS SEMICONDUCTOR CORP0 citations52