Inventor
DRESCHER DIRK
DE4 patents
Patents
4 patentsUS6479373B2Nov 12, 2002
Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
INFINEON TECHNOLOGIES AG237 citations95
US6781180B1Aug 24, 2004
Trench capacitor and method for fabricating the same
INFINEON TECHNOLOGIES AG21 citations87
US6693022B2Feb 17, 2004
CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures
INFINEON TECHNOLOGIES AG6 citations70
US6960541B2Nov 1, 2005
Process for fabrication of a semiconductor component having a tungsten oxide layer
INFINEON TECHNOLOGIES AG0 citations51