Inventor
JEONG HYUN DAM
KR24 patents
⚠️ This page may combine multiple inventors who share the name “JEONG HYUN DAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS6485815B1Nov 26, 2002
Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US6660822B2Dec 9, 2003
Method for forming insulating film between interconnect layers in microelectronic devices
SAMSUNG ELECTRONICS CO LTD34 citations91
US6623711B2Sep 23, 2003
Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same
SAMSUNG ELECTRONICS CO LTD30 citations91
US7989361B2Aug 2, 2011
Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof
SAMSUNG ELECTRONICS CO LTD11 citations84
US7338689B2Mar 4, 2008
Composition for forming low dielectric thin film including siloxane monomer or siloxane polymer having only one type of stereoisomer and method of producing low dielectric thin film using same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7108922B2Sep 19, 2006
Siloxane-based resin and interlayer insulating film formed using the same
SAMSUNG ELECTRONICS CO LTD10 citations72
US7582718B2Sep 1, 2009
Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer
SAMSUNG ELECTRONICS CO LTD1 citations63
US7576230B2Aug 18, 2009
Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer
SAMSUNG ELECTRONICS CO LTD2 citations63
US7470634B2Dec 30, 2008
Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane
SAMSUNG ELECTRONICS CO LTD4 citations63
US6962855B2Nov 8, 2005
Method of forming a porous material layer in a semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations63
US7019099B2Mar 28, 2006
Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US8053173B2Nov 8, 2011
Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer
SAMSUNG ELECTRONICS CO LTD1 citations52
US7750176B2Jul 6, 2010
Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound
SAMSUNG ELECTRONICS CO LTD0 citations52
US6777322B2Aug 17, 2004
Method for fabricating a multi-layered dielectric layer including insulating layer having Si-CH3 bond therein
SAMSUNG ELECTRONICS CO LTD0 citations52
US7867574B2Jan 11, 2011
Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer
SAMSUNG ELECTRONICS CO LTD0 citations49
US7491785B2Feb 17, 2009
Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer
SAMSUNG ELECTRONICS CO LTD0 citations49
JANG HYUNG WOOK
3 patentsUS9333412B2May 10, 2016
Virtual golf simulation apparatus and method and sensing device and method used for the same
JANG HYUNG WOOK9 citations80
US9333409B2May 10, 2016
Virtual golf simulation apparatus and sensing device and method used for the same
JANG HYUNG WOOK3 citations69
US9162132B2Oct 20, 2015
Virtual golf simulation apparatus and sensing device and method used for the same
JANG HYUNG WOOK2 citations59