P

Inventor

JEONG HYUN DAM

KR24 patents
⚠️ This page may combine multiple inventors who share the name “JEONG HYUN DAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

16 patents
US6485815B1Nov 26, 2002

Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD35 citations92
US6660822B2Dec 9, 2003

Method for forming insulating film between interconnect layers in microelectronic devices

SAMSUNG ELECTRONICS CO LTD34 citations91
US6623711B2Sep 23, 2003

Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same

SAMSUNG ELECTRONICS CO LTD30 citations91
US7989361B2Aug 2, 2011

Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof

SAMSUNG ELECTRONICS CO LTD11 citations84
US7338689B2Mar 4, 2008

Composition for forming low dielectric thin film including siloxane monomer or siloxane polymer having only one type of stereoisomer and method of producing low dielectric thin film using same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7108922B2Sep 19, 2006

Siloxane-based resin and interlayer insulating film formed using the same

SAMSUNG ELECTRONICS CO LTD10 citations72
US7582718B2Sep 1, 2009

Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer

SAMSUNG ELECTRONICS CO LTD1 citations63
US7576230B2Aug 18, 2009

Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer

SAMSUNG ELECTRONICS CO LTD2 citations63
US7470634B2Dec 30, 2008

Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane

SAMSUNG ELECTRONICS CO LTD4 citations63
US6962855B2Nov 8, 2005

Method of forming a porous material layer in a semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7019099B2Mar 28, 2006

Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same

SAMSUNG ELECTRONICS CO LTD4 citations61
US8053173B2Nov 8, 2011

Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer

SAMSUNG ELECTRONICS CO LTD1 citations52
US7750176B2Jul 6, 2010

Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound

SAMSUNG ELECTRONICS CO LTD0 citations52
US6777322B2Aug 17, 2004

Method for fabricating a multi-layered dielectric layer including insulating layer having Si-CH3 bond therein

SAMSUNG ELECTRONICS CO LTD0 citations52
US7867574B2Jan 11, 2011

Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer

SAMSUNG ELECTRONICS CO LTD0 citations49
US7491785B2Feb 17, 2009

Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer

SAMSUNG ELECTRONICS CO LTD0 citations49

JANG HYUNG WOOK

3 patents

JANG EUN JOO

1 patent

PARK HYUN JIN

1 patent

SEON JONG BAEK

1 patent

UNIV NAT CHONNAM IND FOUND

1 patent

SAMSUNG CORNING PREC GLASS CO

1 patent